All MOSFET. FQB3P50TM Datasheet

 

FQB3P50TM Datasheet and Replacement


   Type Designator: FQB3P50TM
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 85 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 2.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 56 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.9 Ohm
   Package: D2-PAK
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FQB3P50TM Datasheet (PDF)

 ..1. Size:645K  fairchild semi
 fqb3p50tm fqb3p50 fqi3p50 fqi3p50tu.pdf pdf_icon

FQB3P50TM

August 2000TMQFETQFETQFETQFETFQB3P50 / FQI3P50500V P-Channel MOSFETGeneral DescriptionThese P-Channel enhancement mode power field effectFeaturestransistors are produced using Fairchilds proprietary,planar stripe, DMOS technology. -2.7A, -500V, RDS(on) = 4.9 @VGS = -10 VThis advanced technology has been especially tailored to Low gate charge ( typical 1

 9.1. Size:558K  fairchild semi
 fqb3p20tm fqi3p20tu.pdf pdf_icon

FQB3P50TM

April 2000TMQFETQFETQFETQFETFQB3P20 / FQI3P20200V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -2.8A, -200V, RDS(on) = 2.7 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.0 nC)planar stripe, DMOS technology. Low Crss ( typical 7.5 pF)This advanced technolo

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: SJMN065R65W | FQP3P20 | SM6019NSF | PNMDP100V10 | IRFS640A | 40820 | SSM75T10GS

Keywords - FQB3P50TM MOSFET datasheet

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