All MOSFET. FQB4N20TM Datasheet

 

FQB4N20TM MOSFET. Datasheet pdf. Equivalent


   Type Designator: FQB4N20TM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 3.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 5 nC
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 35 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: D2-PAK

 FQB4N20TM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQB4N20TM Datasheet (PDF)

 ..1. Size:698K  fairchild semi
 fqb4n20tm fqi4n20tu.pdf

FQB4N20TM FQB4N20TM

April 2000TMQFETQFETQFETQFETFQB4N20 / FQI4N20200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.6A, 200V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.0 nC)planar stripe, DMOS technology. Low Crss ( typical 5.0 pF)This advanced technology

 7.1. Size:517K  fairchild semi
 fqb4n20ltm.pdf

FQB4N20TM FQB4N20TM

December 2000TMQFETQFETQFETQFETFQB4N20L / FQI4N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.8A, 200V, RDS(on) = 1.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.0 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced

 7.2. Size:704K  fairchild semi
 fqb4n20 fqi4n20.pdf

FQB4N20TM FQB4N20TM

April 2000TMQFETQFETQFETQFETFQB4N20 / FQI4N20200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.6A, 200V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.0 nC)planar stripe, DMOS technology. Low Crss ( typical 5.0 pF)This advanced technology

 8.1. Size:726K  fairchild semi
 fqb4n25tm fqi4n25tu.pdf

FQB4N20TM FQB4N20TM

May 2000TMQFETQFETQFETQFETFQB4N25 / FQI4N25250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.6A, 250V, RDS(on) = 1.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.3 nC)planar stripe, DMOS technology. Low Crss ( typical 4.8 pF)This advanced technology

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: NCE60ND09AS | HSS2319 | 2SK3377-Z | AM2317 | HGI130N12SL | NCE60NF055F

 

 
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