All MOSFET. FQB4P25TM Datasheet

 

FQB4P25TM Datasheet and Replacement


   Type Designator: FQB4P25TM
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.1 Ohm
   Package: D2-PAK
 

 FQB4P25TM substitution

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FQB4P25TM Datasheet (PDF)

 ..1. Size:580K  fairchild semi
 fqb4p25tm.pdf pdf_icon

FQB4P25TM

December 2000TMQFETQFETQFETQFETFQB4P25 / FQI4P25250V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -4.0A, -250V, RDS(on) = 2.1 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 10.3 pF)This advanced techn

 9.1. Size:642K  fairchild semi
 fqb4p40tm fqb4p40 fqi4p40 fqi4p40tu.pdf pdf_icon

FQB4P25TM

August 2000TMQFETQFETQFETQFETFQB4P40 / FQI4P40400V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -3.5A, -400V, RDS(on) = 3.1 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 18 nC)planar stripe, DMOS technology. Low Crss ( typical 11 pF)This advanced technolog

Datasheet: FQB3P50TM , FQB46N15TMAM002 , FQB47P06TMAM002 , FQB4N20LTM , FQB4N20TM , FQB4N25TM , FQB4N50TM , FQB4N90TM , IRFB4115 , FQB4P40TM , FQB50N06LTM , FQB50N06TM , FQB55N06TM , FQB55N10TM , FQB5N15TM , FQB5N20LTM , FQB5N20TM .

History: IRF1010NL | IRF720S

Keywords - FQB4P25TM MOSFET datasheet

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