FQB4P25TM Specs and Replacement

Type Designator: FQB4P25TM

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 65 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.1 Ohm

Package: D2-PAK

FQB4P25TM substitution

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FQB4P25TM datasheet

 ..1. Size:580K  fairchild semi
 fqb4p25tm.pdf pdf_icon

FQB4P25TM

December 2000 TM QFET QFET QFET QFET FQB4P25 / FQI4P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -4.0A, -250V, RDS(on) = 2.1 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 10.3 pF) This advanced techn... See More ⇒

 9.1. Size:642K  fairchild semi
 fqb4p40tm fqb4p40 fqi4p40 fqi4p40tu.pdf pdf_icon

FQB4P25TM

August 2000 TM QFET QFET QFET QFET FQB4P40 / FQI4P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -3.5A, -400V, RDS(on) = 3.1 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 18 nC) planar stripe, DMOS technology. Low Crss ( typical 11 pF) This advanced technolog... See More ⇒

Detailed specifications: FQB3P50TM, FQB46N15TMAM002, FQB47P06TMAM002, FQB4N20LTM, FQB4N20TM, FQB4N25TM, FQB4N50TM, FQB4N90TM, P55NF06, FQB4P40TM, FQB50N06LTM, FQB50N06TM, FQB55N06TM, FQB55N10TM, FQB5N15TM, FQB5N20LTM, FQB5N20TM

Keywords - FQB4P25TM MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.