FQB4P25TM MOSFET. Datasheet pdf. Equivalent
Type Designator: FQB4P25TM
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 10.3 nC
trⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 65 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.1 Ohm
Package: D2-PAK
FQB4P25TM Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQB4P25TM Datasheet (PDF)
fqb4p25tm.pdf
December 2000TMQFETQFETQFETQFETFQB4P25 / FQI4P25250V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -4.0A, -250V, RDS(on) = 2.1 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 10.3 pF)This advanced techn
fqb4p40tm fqb4p40 fqi4p40 fqi4p40tu.pdf
August 2000TMQFETQFETQFETQFETFQB4P40 / FQI4P40400V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -3.5A, -400V, RDS(on) = 3.1 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 18 nC)planar stripe, DMOS technology. Low Crss ( typical 11 pF)This advanced technolog
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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