IRFW550A MOSFET Datasheet: N-Ch, 100V, 40A. Full specification with pinout and replacement list

IRFW550A Specs and Replacement

Type Designator: IRFW550A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 167 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 420 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: TO263

IRFW550A substitution

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IRFW550A datasheet

..1. Size:266K fairchild semi
irfw550a irfi550a.pdf pdf_icon

IRFW/I550A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input Capacitance ID = 40 A Improved Gate Charge Extended Safe Operating Area D2-PAK I2-PAK 175 C Operating Temperature 2 A (Max.) @ VDS = 100V Lower Leakage Current 10 Lower RDS(ON) 0.032 (Typ.) 1 1 2 3 3 1. Gat... See More ⇒

..2. Size:513K samsung
irfw550a.pdf pdf_icon

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input Capacitance ID = 40 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature 2 Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.032 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute ... See More ⇒

9.1. Size:285K 1
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