IRFW550A Datasheet and Replacement
Type Designator: IRFW550A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 167 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 420 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: TO263
IRFW550A substitution
IRFW550A Datasheet (PDF)
irfw550a irfi550a.pdf

IRFW/I550AAdvanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input CapacitanceID = 40 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK 175 C Operating Temperature2A (Max.) @ VDS = 100V Lower Leakage Current : 10 Lower RDS(ON) : 0.032 (Typ.)112331. Gat
irfw550a.pdf

Advanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input CapacitanceID = 40 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature2 Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.032 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute
Datasheet: IRFU9222 , IRFU9310 , IRFUC20 , IRFW450 , IRFW510A , IRFW520A , IRFW530A , IRFW540A , 2SK3878 , IRFW610A , IRFW614A , IRFW620A , IRFW624A , IRFW630A , IRFW634A , IRFW640A , IRFW644A .
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