All MOSFET. FQB5P20TM Datasheet

 

FQB5P20TM Datasheet and Replacement


   Type Designator: FQB5P20TM
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 4.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 10 nC
   tr ⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: D2-PAK
 

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FQB5P20TM Datasheet (PDF)

 ..1. Size:667K  fairchild semi
 fqb5p20tm.pdf pdf_icon

FQB5P20TM

May 2000TMQFETQFETQFETQFETFQB5P20 / FQI5P20200V P-Channel MOSFETGeneral DescriptionThese P-Channel enhancement mode power field effectFeaturestransistors are produced using Fairchilds proprietary,planar stripe, DMOS technology. -4.8A, -200V, RDS(on) = 1.4 @VGS = -10 VThis advanced technology has been especially tailored to Low gate charge ( typical 10 n

 9.1. Size:653K  fairchild semi
 fqb5p10tm fqi5p10tu.pdf pdf_icon

FQB5P20TM

TMQFETFQB5P10 / FQI5P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -4.5A, -100V, RDS(on) = 1.05 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.3 nC)planar stripe, DMOS technology. Low Crss ( typical 18 pF)This advanced technology has been especially tailore

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

Keywords - FQB5P20TM MOSFET datasheet

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