FQB630TM Specs and Replacement

Type Designator: FQB630TM

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 78 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 75 nS

Cossⓘ - Output Capacitance: 85 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: D2-PAK

FQB630TM substitution

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FQB630TM datasheet

 ..1. Size:754K  fairchild semi
 fqb630tm.pdf pdf_icon

FQB630TM

April 2000 TM QFET QFET QFET QFET 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 9A, 200V, RDS(on) = 0.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 35 pF) This advanced technology has b... See More ⇒

Detailed specifications: FQB5N50CFTM, FQB5N50CTM, FQB5N50TM, FQB5N60CTM, FQB5N60TM, FQB5N90TM, FQB5P10TM, FQB5P20TM, K4145, FQB65N06TM, FQB6N15TM, FQB6N25TM, FQB6N40CTM, FQB6N50, FQB6N60CTM, FQB6N60TM, FQB6N70TM

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