IRFW610A Datasheet and Replacement
Type Designator: IRFW610A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 3.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 7 nC
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 35 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO263
IRFW610A substitution
IRFW610A Datasheet (PDF)
irfw610a.pdf
Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V2 Low RDS(ON) : 1.169 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Chara
irfw610b irfi610b.pdf
November 2001IRFW610B / IRFI610B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.3A, 200V, RDS(on) = 1.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 7.2 nC)planar, DMOS technology. Low Crss ( typical 6.8 pF)This advanced technology has been especially tailored t
Datasheet: IRFU9310 , IRFUC20 , IRFW450 , IRFW510A , IRFW520A , IRFW530A , IRFW540A , IRFW550A , IRFP250N , IRFW614A , IRFW620A , IRFW624A , IRFW630A , IRFW634A , IRFW640A , IRFW644A , IRFW710A .
Keywords - IRFW610A MOSFET datasheet
IRFW610A cross reference
IRFW610A equivalent finder
IRFW610A lookup
IRFW610A substitution
IRFW610A replacement
LIST
Last Update
MOSFET: F8N50 | F80N06 | F7N80 | F7N70 | F7N60 | F740 | F6N90 | F640 | F630 | F5N80 | F5N65C | F50N20 | F50N06 | F4N70 | F4N65 | F4N60
Popular searches
2sa763 | a933 | 2sa818 replacement | irfb3607 datasheet | 2n2907 equivalent | c2026 | mpsa56 transistor equivalent | 13009 transistor