All MOSFET. FQB8P10TM Datasheet

 

FQB8P10TM Datasheet and Replacement


   Type Designator: FQB8P10TM
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 110 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.53 Ohm
   Package: D2-PAK
 

 FQB8P10TM substitution

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FQB8P10TM Datasheet (PDF)

 ..1. Size:665K  fairchild semi
 fqb8p10tm fqi8p10tu.pdf pdf_icon

FQB8P10TM

TMQFETFQB8P10 / FQI8P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -8.0A, -100V, RDS(on) = 0.53 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been especially tailored

 7.1. Size:667K  fairchild semi
 fqb8p10 fqi8p10.pdf pdf_icon

FQB8P10TM

TMQFETFQB8P10 / FQI8P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -8.0A, -100V, RDS(on) = 0.53 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been especially tailored

Datasheet: FQB7N30TM , FQB7N60TM , FQB7N65CTM , FQB7N80TMAM002 , FQB7P06TM , FQB85N06TMAM002 , FQB8N25TM , FQB8N60CFTM , 10N65 , FQB9N08LTM , FQB9N08TM , FQB9N15TM , FQB9N25CTM , FQB9N25TM , FQB9N50CFTM , FQB9N50CTM , FQB9N50TM .

History: IRFR8314

Keywords - FQB8P10TM MOSFET datasheet

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