All MOSFET. IRFW620A Datasheet

 

IRFW620A MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFW620A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 47 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO263

 IRFW620A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFW620A Datasheet (PDF)

 ..1. Size:210K  1
 irfi620a irfw620a.pdf

IRFW620A IRFW620A

 8.1. Size:216K  1
 irfi624a irfw624a.pdf

IRFW620A IRFW620A

 8.2. Size:514K  samsung
 irfw624a.pdf

IRFW620A IRFW620A

Advanced Power MOSFETFEATURESBVDSS = 250 V Avalanche Rugged TechnologyRDS(on) = 1.1 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 250V2 Low RDS(ON) : 0.742 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Chara

 9.1. Size:215K  1
 irfi630a irfw630a.pdf

IRFW620A IRFW620A

 9.2. Size:216K  1
 irfi644a irfw644a.pdf

IRFW620A IRFW620A

 9.3. Size:205K  1
 irfi610a irfw610a.pdf

IRFW620A IRFW620A

 9.4. Size:214K  1
 irfi634a irfw634a.pdf

IRFW620A IRFW620A

 9.5. Size:212K  1
 irfi640a irfw640a.pdf

IRFW620A IRFW620A

 9.6. Size:209K  1
 irfi614a irfw614a.pdf

IRFW620A IRFW620A

 9.7. Size:712K  fairchild semi
 irfw630b irfi630b.pdf

IRFW620A IRFW620A

IRFW630B / IRFI630B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 22 nC)planar, DMOS technology. Low Crss ( typical 22 pF)This advanced technology has been especially tailored to Fast switc

 9.8. Size:697K  fairchild semi
 irfw630b.pdf

IRFW620A IRFW620A

November 2013IRFW630BN-Channel MOSFET200 V, 9 A, 400 mFeaturesDescriptionThese N-Channel enhancement mode power field effect 9.0 A, 200 V, RDS(on) = 400 m (Max.) @ VGS = 10 V, transistors are produced using Fairchilds proprietary, ID = 4.5 A planar, DMOS technology.This advanced technology has been especially tailored to minimize on-state Low Gate Charge (Typ.

 9.9. Size:798K  fairchild semi
 irfw610b irfi610b.pdf

IRFW620A IRFW620A

November 2001IRFW610B / IRFI610B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.3A, 200V, RDS(on) = 1.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 7.2 nC)planar, DMOS technology. Low Crss ( typical 6.8 pF)This advanced technology has been especially tailored t

 9.10. Size:509K  samsung
 irfw630a.pdf

IRFW620A IRFW620A

Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = 9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V2 Low RDS(ON) : 0.333 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Charact

 9.11. Size:505K  samsung
 irfw610a.pdf

IRFW620A IRFW620A

Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V2 Low RDS(ON) : 1.169 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Chara

 9.12. Size:506K  samsung
 irfw644a.pdf

IRFW620A IRFW620A

Advanced Power MOSFETFEATURESBVDSS = 250 V Avalanche Rugged TechnologyRDS(on) = 0.28 Rugged Gate Oxide Technology Lower Input CapacitanceID = 14 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 250V2 Lower RDS(ON) : 0.214 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Charact

 9.13. Size:513K  samsung
 irfw614a.pdf

IRFW620A IRFW620A

Advanced Power MOSFETFEATURESBVDSS = 250 V Avalanche Rugged TechnologyRDS(on) = 2.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 250V2 Lower RDS(ON) : 1.393 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Cha

 9.14. Size:512K  samsung
 irfw640a.pdf

IRFW620A IRFW620A

Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.18 Rugged Gate Oxide Technology Lower Input CapacitanceID = 18 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V2 Lower RDS(ON) : 0.144 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Cha

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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