All MOSFET. 2SJ202 Equivalents Search

 

2SJ202 Specs and Replacement


   Type Designator: 2SJ202
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 16 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 7 V
   |Id| ⓘ - Maximum Drain Current: 0.1 A
   Tj ⓘ - Maximum Junction Temperature: 80 °C
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 17 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 30 Ohm
   Package: SC70
 

 2SJ202 substitution

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2SJ202 Specs

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2SJ202

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2SJ202

2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application Unit mm High breakdown voltage VDSS = -180 V High forward transfer admittance Y = 4.0 S (typ.) fs Complementary to 2SK1529 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source voltage VDSS -180 V Gate-source voltage VGSS 20 V Dr... See More ⇒

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2SJ202

2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High-Power Amplifier Application Unit mm High breakdown voltage VDSS = -200 V High forward transfer admittance Yfs = 5.0 S (typ.) Complementary to 2SK1530 Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source voltage VDSS -200 V JEDEC Gate-source voltag... See More ⇒

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2SJ202

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Detailed specifications: 2SJ179 , 2SJ180 , 2SJ184 , 2SJ185 , 2SJ196 , 2SJ197 , 2SJ198 , 2SJ199 , IRF9540N , 2SJ203 , 2SJ204 , 2SJ205 , 2SJ206 , 2SJ207 , 2SJ208 , 2SJ209 , 2SJ210 .

Keywords - 2SJ202 MOSFET specs

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