2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = -180 V High forward transfer admittance : |Y | = 4.0 S (typ.) fs Complementary to 2SK1529 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source voltage VDSS -180 VGate-source voltage VGSS 20 VDr

2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High-Power Amplifier Application Unit: mm High breakdown voltage : VDSS = -200 V High forward transfer admittance : |Yfs| = 5.0 S (typ.) Complementary to 2SK1530 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source voltage VDSS -200 VJEDEC Gate-source voltag

SMD Type MOSFETP-Channel MOSFET2SJ2071.70 0.1 Features VDS (V) =-16V ID =-1 A (VGS =-10V)0.42 0.10.46 0.1 RDS(ON) 1.5 (VGS =-4V) RDS(ON) 4 (VGS =-2.5V)1.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -16V Gate-Source Voltage VGS 16 Continuous Drain Current ID -

SMD Type MOSFETP-Channel MOSFET2SJ204SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features VDS (V) =-30V ID =-200m A1 2+0.02 RDS(ON) 8 (VGS =-10V) +0.10.15 -0.020.95 -0.1+0.11.9 -0.2 RDS(ON) 13 (VGS =-4V) Compementary to 2SK15821. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Ratin

SMD Type MOSFETP-Channel MOSFET2SJ209SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) =-100V1 2 ID =-0.1 A+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.1 RDS(ON) 60 (VGS =-10V) RDS(ON) 100 (VGS =-4V)1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS

SMD Type MOSFETP-Channel MOSFET2SJ2061.70 0.1 Features VDS (V) =-30V ID =-0.5 A (VGS =-10V)0.42 0.10.46 0.1 RDS(ON) 3 (VGS =-10V) RDS(ON) 4 (VGS =-4V)1.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -30V Gate-Source Voltage VGS 20 Continuous Drain Current ID -0

SMD Type MOSFETP-Channel MOSFET2SJ203SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features VDS (V) =-16V1 2 ID =-200m A+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1 RDS(ON) 23 (VGS =-2.5V) RDS(ON) 10 (VGS =-4V)1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VD

SMD Type MOSFETP-Channel MOSFET2SJ203SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features VDS (V) =-16V ID =-200m A1 2 RDS(ON) 23 (VGS =-2.5V)+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2 RDS(ON) 10 (VGS =-4V)1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Volta

SMD Type MOSFETP-Channel MOSFET2SJ209SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features VDS (V) =-100V ID =-0.1 A1 2+0.02 RDS(ON) 60 (VGS =-10V) +0.10.15 -0.020.95-0.1+0.11.9-0.2 RDS(ON) 100 (VGS =-4V)1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage

SMD Type MOSFETP-Channel MOSFET2SJ2081.70 0.1 Features VDS (V) =-16V ID =-2 A0.42 0.10.46 0.1 RDS(ON) 1 (VGS =-4V) RDS(ON) 3 (VGS =-2.5V)1.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -16V Gate-Source Voltage VGS 16 Continuous Drain Current ID -2A Pulsed

SMD Type MOSFETP-Channel MOSFET2SJ2051.70 0.1 Features VDS (V) =-16V ID =-0.5 A (VGS =-10V)0.42 0.10.46 0.1 RDS(ON) 3 (VGS =-4V) RDS(ON) 5 (VGS =-2.5V)1.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -16V Gate-Source Voltage VGS 16 Continuous Drain Current ID -

SMD Type MOSFETP-Channel MOSFET2SJ204SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) =-30V1 2 ID =-200m A+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.1 RDS(ON) 8 (VGS =-10V) RDS(ON) 13 (VGS =-4V) Compementary to 2SK15821. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit