FQD18N20V2TM MOSFET Datasheet: N-Ch, 200V, 15A. Full specification with pinout and replacement list

FQD18N20V2TM Specs and Replacement

Type Designator: FQD18N20V2TM

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 133 nS

Cossⓘ - Output Capacitance: 200 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm

Package: D-PAK

FQD18N20V2TM substitution

- MOSFET ⓘ Cross-Reference Search

FQD18N20V2TM datasheet

..1. Size:748K fairchild semi
fqd18n20v2tf fqd18n20v2tm fqd18n20v2 fqu18n20v2.pdf pdf_icon

January 2009 QFET FQD18N20V2 / FQU18N20V2 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 15A, 200V, RDS(on) = 0.14 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 20 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been espec... See More ⇒

..2. Size:846K cn vbsemi
fqd18n20v2tm.pdf pdf_icon

FQD18N20V2TM www.VBsemi.tw N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 200 0.055 at VGS = 10 V 30 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RA... See More ⇒

Detailed specifications: FQD13N10TM , FQD14N15TM , FQD16N15TM , FQD17N08LTF , FQD17N08LTM , FQD17P06TF , FQD17P06TM , FQD18N20V2TF , IRF3205 , FQD19N10LTF , FQD19N10LTM , FQD19N10TF , FQD19N10TM , FQD1N50TF , FQD1N50TM , FQD1N60CTF , FQD1N60CTM .