All MOSFET. FQD18N20V2TM Datasheet

 

FQD18N20V2TM MOSFET. Datasheet pdf. Equivalent

Type Designator: FQD18N20V2TM

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 83 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 15 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 20 nC

Rise Time (tr): 133 nS

Drain-Source Capacitance (Cd): 200 pF

Maximum Drain-Source On-State Resistance (Rds): 0.14 Ohm

Package: D-PAK

FQD18N20V2TM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQD18N20V2TM Datasheet (PDF)

0.1. fqd18n20v2tf fqd18n20v2tm fqd18n20v2 fqu18n20v2.pdf Size:748K _fairchild_semi

FQD18N20V2TM
FQD18N20V2TM

January 2009 QFET® FQD18N20V2 / FQU18N20V2 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 15A, 200V, RDS(on) = 0.14Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 20 nC) planar stripe, DMOS technology. • Low Crss ( typical 25 pF) This advanced technology has been espec

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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