FQD1P50TF Specs and Replacement

Type Designator: FQD1P50TF

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 10.5 Ohm

Package: D-PAK

FQD1P50TF substitution

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FQD1P50TF datasheet

 ..1. Size:691K  fairchild semi
 fqd1p50tf fqd1p50tm.pdf pdf_icon

FQD1P50TF

January 2009 QFET FQD1P50 / FQU1P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -1.2A, -500V, RDS(on) = 10.5 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 11 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology has been especi... See More ⇒

Detailed specifications: FQD1N50TF, FQD1N50TM, FQD1N60CTF, FQD1N60CTM, FQD1N60TF, FQD1N60TM, FQD1N80TF, FQD1N80TM, IRF640N, FQD1P50TM, FQD20N06L, FQD20N06TF, FQD20N06TM, FQD24N08TF, FQD24N08TM, FQD2N100TF, FQD2N100TM

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