FQD20N06TM Datasheet and Replacement
Type Designator: FQD20N06TM
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 16.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 170 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.063 Ohm
Package: D-PAK
FQD20N06TM substitution
FQD20N06TM Datasheet (PDF)
fqd20n06tf fqd20n06tm fqd20n06 fqu20n06 fqu20n06tu.pdf

January 2009QFETFQD20N06 / FQU20N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 16.8A, 60V, RDS(on) = 0.063 @ VGS = 10Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 11.5 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been especi
fqd20n06l fqu20n06l.pdf

May 2001TMQFETFQD20N06L / FQU20N06L60V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 17.2A, 60V, RDS(on) = 0.06 @ VGS = 10Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 9.5 nC)planar stripe, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has been es
fqd20n06l.pdf

Mar 2009TMQFETFQD20N06L / FQU20N06L60V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 17.2A, 60V, RDS(on) = 0.06 @ VGS = 10Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 9.5 nC)planar stripe, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has been es
fqd20n06.pdf

November 2013FQD20N06N-Channel QFET MOSFET60 V, 16.8 A, 63 m Description FeaturesThis N-Channel enhancement mode power MOSFET is 16.8 A, 60 V, RDS(on) = 63 m (Max.) @ VGS = 10V,produced using Fairchild Semiconductors proprietary ID = 8.4 Aplanar stripe and DMOS technology. This advanced Low Gate Charge (Typ.11.5 nC)MOSFET technology has been especially ta
Datasheet: FQD1N60TF , FQD1N60TM , FQD1N80TF , FQD1N80TM , FQD1P50TF , FQD1P50TM , FQD20N06L , FQD20N06TF , P55NF06 , FQD24N08TF , FQD24N08TM , FQD2N100TF , FQD2N100TM , FQD2N30TM , FQD2N40TF , FQD2N40TM , FQD2N50TF .
History: CEB15P15 | BSC059N04LSG | MIC94050YM4TR | SUM65N20-30 | CJU20N06 | PK8A6EA | SUD50P10-43L
Keywords - FQD20N06TM MOSFET datasheet
FQD20N06TM cross reference
FQD20N06TM equivalent finder
FQD20N06TM lookup
FQD20N06TM substitution
FQD20N06TM replacement
History: CEB15P15 | BSC059N04LSG | MIC94050YM4TR | SUM65N20-30 | CJU20N06 | PK8A6EA | SUD50P10-43L



LIST
Last Update
MOSFET: JMSL1010PU | JMSL1010PP | JMSL1010PKS | JMSL1010PK | JMSL1010PGS | JMSL1010PGQ | JMSL1010PGD | JMSL1010PG | JMSL1010PE | JMSL1010PC | JMSL1010AUQ | JMSL1010AU | JMSL1010AP | JMSL1010AKQ | JMSL1010AK | JMSL1010AGQ
Popular searches
2sb647 | k3561 transistor | c3203 transistor | irfp450 equivalent | 2sb649 | 2sb324 transistor | b754 transistor | 2sc828 equivalent