FQD20N06TM. Аналоги и основные параметры

Наименование производителя: FQD20N06TM

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 38 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 25 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 16.8 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 45 ns

Cossⓘ - Выходная емкость: 170 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.063 Ohm

Тип корпуса: D-PAK

Аналог (замена) для FQD20N06TM

- подборⓘ MOSFET транзистора по параметрам

 

FQD20N06TM даташит

 ..1. Size:745K  fairchild semi
 fqd20n06tf fqd20n06tm fqd20n06 fqu20n06 fqu20n06tu.pdf pdf_icon

FQD20N06TM

January 2009 QFET FQD20N06 / FQU20N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 16.8A, 60V, RDS(on) = 0.063 @ VGS = 10V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 11.5 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especi

 6.1. Size:664K  fairchild semi
 fqd20n06l fqu20n06l.pdf pdf_icon

FQD20N06TM

May 2001 TM QFET FQD20N06L / FQU20N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 17.2A, 60V, RDS(on) = 0.06 @ VGS = 10V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 9.5 nC) planar stripe, DMOS technology. Low Crss ( typical 35 pF) This advanced technology has been es

 6.2. Size:855K  fairchild semi
 fqd20n06l.pdf pdf_icon

FQD20N06TM

Mar 2009 TM QFET FQD20N06L / FQU20N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 17.2A, 60V, RDS(on) = 0.06 @ VGS = 10V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 9.5 nC) planar stripe, DMOS technology. Low Crss ( typical 35 pF) This advanced technology has been es

 6.3. Size:1300K  onsemi
 fqd20n06.pdf pdf_icon

FQD20N06TM

November 2013 FQD20N06 N-Channel QFET MOSFET 60 V, 16.8 A, 63 m Description Features This N-Channel enhancement mode power MOSFET is 16.8 A, 60 V, RDS(on) = 63 m (Max.) @ VGS = 10V, produced using Fairchild Semiconductor s proprietary ID = 8.4 A planar stripe and DMOS technology. This advanced Low Gate Charge (Typ.11.5 nC) MOSFET technology has been especially ta

ПОКАЗАТЬ ЕЩЁ

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