FQD24N08TF Specs and Replacement

Type Designator: FQD24N08TF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 19.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 105 nS

Cossⓘ - Output Capacitance: 210 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: D-PAK

FQD24N08TF substitution

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FQD24N08TF datasheet

 ..1. Size:724K  fairchild semi
 fqd24n08tf fqd24n08tm.pdf pdf_icon

FQD24N08TF

January 2009 QFET FQD24N08 / FQU24N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 19.6A, 80V, RDS(on) = 0.06 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 50 pF) This advanced technology has been especiall... See More ⇒

Detailed specifications: FQD1N60TM, FQD1N80TF, FQD1N80TM, FQD1P50TF, FQD1P50TM, FQD20N06L, FQD20N06TF, FQD20N06TM, 10N60, FQD24N08TM, FQD2N100TF, FQD2N100TM, FQD2N30TM, FQD2N40TF, FQD2N40TM, FQD2N50TF, FQD2N50TM

Keywords - FQD24N08TF MOSFET specs

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