All MOSFET. FQD24N08TF Datasheet

 

FQD24N08TF MOSFET. Datasheet pdf. Equivalent


   Type Designator: FQD24N08TF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 19.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 19 nC
   trⓘ - Rise Time: 105 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: D-PAK

 FQD24N08TF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQD24N08TF Datasheet (PDF)

 ..1. Size:724K  fairchild semi
 fqd24n08tf fqd24n08tm.pdf

FQD24N08TF FQD24N08TF

January 2009QFETFQD24N08 / FQU24N0880V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 19.6A, 80V, RDS(on) = 0.06 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC)planar stripe, DMOS technology. Low Crss ( typical 50 pF)This advanced technology has been especiall

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IPA60R460CE

 

 
Back to Top