All MOSFET. FQD3N30TF Datasheet

 

FQD3N30TF Datasheet and Replacement


   Type Designator: FQD3N30TF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 2.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
   Package: D-PAK
      - MOSFET Cross-Reference Search

 

FQD3N30TF Datasheet (PDF)

 ..1. Size:737K  fairchild semi
fqd3n30tf fqd3n30tm.pdf pdf_icon

FQD3N30TF

April 2000TMQFETQFETQFETQFET 300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 2.4A, 300V, RDS(on) = 2.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.5 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology

 9.1. Size:575K  fairchild semi
fqd3n60 fqu3n60.pdf pdf_icon

FQD3N30TF

April 2000TMQFETQFETQFETQFETFQD3N60 / FQU3N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.4A, 600V, RDS(on) = 3.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 5.5 pF)This advanced technology h

 9.2. Size:500K  fairchild semi
fqd3n60ctm ws.pdf pdf_icon

FQD3N30TF

November 2013FQD3N60CTM_WSN-Channel QFET MOSFET600 V, 2.4 A, 3.4 Features Description 2.4 A, 600 V, RDS(on) = 3.4 (Max.) @ VGS = 10 V, ID = 1.2 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductors proprietary Low Gate Charge (Typ. 10.5 nC)planar stripe and DMOS technology. This advanced Low Crss (Typ. 5 pF)MOSFET te

 9.3. Size:927K  fairchild semi
fqd3n50c fqu3n50c.pdf pdf_icon

FQD3N30TF

March 2008 QFETFQD3N50C / FQU3N50C500V N-Channel MOSFETFeatures Description 2.5A, 500V, RDS(on) = 2.5 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 10 nC) transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. Low Crss ( typical 8.5pF)This advanced technology has been especially tai

Datasheet: FQD2N90TF , FQD2N90TM , FQD2P40TF , FQD2P40TM , FQD30N06LTF , FQD30N06LTM , FQD30N06TF , FQD30N06TM , IRFP450 , FQD3N30TM , FQD3N40TM , FQD3N50CTF , FQD3N50CTM , FQD3N60TM , FQD3P20TF , FQD3P20TM , FQD3P50TF .

History: STD4NK60Z-1 | BSB280N15NZ3G | 12N65KG-TF1-T | 2SK1580 | R5016ANJ | ELM13401CA | DH150N12B

Keywords - FQD3N30TF MOSFET datasheet

 FQD3N30TF cross reference
 FQD3N30TF equivalent finder
 FQD3N30TF lookup
 FQD3N30TF substitution
 FQD3N30TF replacement

 

 
Back to Top

 


 
.