IRFW730A Datasheet and Replacement
Type Designator: IRFW730A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 73
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id| ⓘ - Maximum Drain Current: 5.5
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
Qg ⓘ - Total Gate Charge: 32
nC
tr ⓘ - Rise Time: 18
nS
Cossⓘ -
Output Capacitance: 95
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1
Ohm
Package:
TO263
-
MOSFET ⓘ Cross-Reference Search
IRFW730A Datasheet (PDF)
..2. Size:506K samsung
irfw730a.pdf 
Advanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 1.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 5.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V2 Lower RDS(ON) : 0.765 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol C
9.4. Size:679K fairchild semi
irfw740b irfi740b.pdf
November 2001IRFW740B / IRFI740B400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 10A, 400V, RDS(on) = 0.54 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 41 nC)planar, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has been especially tailored to
9.5. Size:666K fairchild semi
irfw720b irfi720b.pdf
November 2001IRFW720B / IRFI720B400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.3A, 400V, RDS(on) = 1.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC)planar, DMOS technology. Low Crss ( typical 11 pF)This advanced technology has been especially tailored to
9.6. Size:667K fairchild semi
irfw710b irfi710b.pdf
November 2001IRFW710B / IRFI710B400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.0A, 400V, RDS(on) = 3.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 7.7 nC)planar, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology has been especially tailored t
9.7. Size:506K samsung
irfw720a.pdf
Advanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 1.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V2 Lower RDS(ON) : 1.408 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol C
9.8. Size:509K samsung
irfw740a.pdf
Advanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 0.55 Rugged Gate Oxide Technology Lower Input CapacitanceID = 10 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V2 Lower RDS(ON) : 0.437 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Cha
Datasheet: IRFW620A
, IRFW624A
, IRFW630A
, IRFW634A
, IRFW640A
, IRFW644A
, IRFW710A
, IRFW720A
, AON7410
, IRFW740A
, IRFW820A
, IRFW830A
, IRFW840A
, IRFWZ14A
, IRFWZ24A
, IRFWZ34A
, IRFWZ44A
.
Keywords - IRFW730A MOSFET datasheet
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