IRFW730A Datasheet and Replacement
Type Designator: IRFW730A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 73 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 95 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO263
IRFW730A substitution
IRFW730A Datasheet (PDF)
irfw730a.pdf
Advanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 1.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 5.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V2 Lower RDS(ON) : 0.765 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol C
Datasheet: IRFW620A , IRFW624A , IRFW630A , IRFW634A , IRFW640A , IRFW644A , IRFW710A , IRFW720A , IRLB4132 , IRFW740A , IRFW820A , IRFW830A , IRFW840A , IRFWZ14A , IRFWZ24A , IRFWZ34A , IRFWZ44A .
Keywords - IRFW730A MOSFET datasheet
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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