All MOSFET. FQD4N50TM Datasheet

 

FQD4N50TM MOSFET. Datasheet pdf. Equivalent

Type Designator: FQD4N50TM

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 45 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 2.6 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 10 nC

Rise Time (tr): 45 nS

Drain-Source Capacitance (Cd): 55 pF

Maximum Drain-Source On-State Resistance (Rds): 2.7 Ohm

Package: D-PAK

FQD4N50TM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQD4N50TM Datasheet (PDF)

0.1. fqd4n50tf fqd4n50tm fqd4n50 fqu4n50.pdf Size:844K _fairchild_semi

FQD4N50TM
FQD4N50TM

January 2009 QFET® FQD4N50 / FQU4N50 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 2.6A, 500V, RDS(on) = 2.7Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 10 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.0 pF) This advanced technology has been especiall

9.1. fqd4n25tf fqd4n25tm fqu4n25tu.pdf Size:717K _fairchild_semi

FQD4N50TM
FQD4N50TM

May 2000 TM QFET QFET QFET QFET FQD4N25 / FQU4N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 3.0A, 250V, RDS(on) = 1.75Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.3 nC) planar stripe, DMOS technology. • Low Crss ( typical 4.8 pF) This advanced technology

9.2. fqd4n20tf fqd4n20 fqu4n20 fqu4n20tu.pdf Size:819K _fairchild_semi

FQD4N50TM
FQD4N50TM

January 2009 QFET® FQD4N20 / FQU4N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 3.0A, 200V, RDS(on) = 1.4Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 5.0 pF) This advanced technology has been especial

 9.3. fqd4n25 fqu4n25.pdf Size:722K _fairchild_semi

FQD4N50TM
FQD4N50TM

May 2000 TM QFET QFET QFET QFET FQD4N25 / FQU4N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 3.0A, 250V, RDS(on) = 1.75Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.3 nC) planar stripe, DMOS technology. • Low Crss ( typical 4.8 pF) This advanced technology

9.4. fqd4n20ltm.pdf Size:521K _fairchild_semi

FQD4N50TM
FQD4N50TM

December 2000 TM QFET QFET QFET QFET FQD4N20L / FQU4N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 3.2A, 200V, RDS(on) = 1.35Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.0 pF) This advanced

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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