Справочник MOSFET. FQD4N50TM

 

FQD4N50TM Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FQD4N50TM
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 45 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 2.6 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 45 ns
   Cossⓘ - Выходная емкость: 55 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 2.7 Ohm
   Тип корпуса: D-PAK
 

 Аналог (замена) для FQD4N50TM

   - подбор ⓘ MOSFET транзистора по параметрам

 

FQD4N50TM Datasheet (PDF)

 ..1. Size:844K  fairchild semi
fqd4n50tf fqd4n50tm fqd4n50 fqu4n50.pdfpdf_icon

FQD4N50TM

January 2009QFETFQD4N50 / FQU4N50500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 2.6A, 500V, RDS(on) = 2.7 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology has been especiall

 9.1. Size:722K  fairchild semi
fqd4n25 fqu4n25.pdfpdf_icon

FQD4N50TM

May 2000TMQFETQFETQFETQFETFQD4N25 / FQU4N25250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.0A, 250V, RDS(on) = 1.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.3 nC)planar stripe, DMOS technology. Low Crss ( typical 4.8 pF)This advanced technology

 9.2. Size:717K  fairchild semi
fqd4n25tf fqd4n25tm fqu4n25tu.pdfpdf_icon

FQD4N50TM

May 2000TMQFETQFETQFETQFETFQD4N25 / FQU4N25250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.0A, 250V, RDS(on) = 1.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.3 nC)planar stripe, DMOS technology. Low Crss ( typical 4.8 pF)This advanced technology

 9.3. Size:521K  fairchild semi
fqd4n20ltm.pdfpdf_icon

FQD4N50TM

December 2000TMQFETQFETQFETQFETFQD4N20L / FQU4N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.2A, 200V, RDS(on) = 1.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.0 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced

Другие MOSFET... FQD3P20TM , FQD3P50TF , FQD3P50TM , FQD4N20LTM , FQD4N20TF , FQD4N25TF , FQD4N25TM , FQD4N50TF , IRF1407 , FQD4P25TF , FQD4P25TM , FQD4P40 , FQD4P40TF , FQD4P40TM , FQD5N15TF , FQD5N15TM , FQD5N20LTF .

History: 7N65L-TF2-T | IXTK120N25P | STD100N03LT4 | SSM6P15FU | STW75N60M6 | HGP059N08A | SWN7N65K2

 

 
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