FQD4N50TM Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: FQD4N50TM
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 45 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 2.6 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 45 ns
Cossⓘ - Выходная емкость: 55 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2.7 Ohm
Тип корпуса: D-PAK
- подбор MOSFET транзистора по параметрам
FQD4N50TM Datasheet (PDF)
fqd4n50tf fqd4n50tm fqd4n50 fqu4n50.pdf

January 2009QFETFQD4N50 / FQU4N50500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 2.6A, 500V, RDS(on) = 2.7 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology has been especiall
fqd4n25 fqu4n25.pdf

May 2000TMQFETQFETQFETQFETFQD4N25 / FQU4N25250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.0A, 250V, RDS(on) = 1.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.3 nC)planar stripe, DMOS technology. Low Crss ( typical 4.8 pF)This advanced technology
fqd4n25tf fqd4n25tm fqu4n25tu.pdf

May 2000TMQFETQFETQFETQFETFQD4N25 / FQU4N25250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.0A, 250V, RDS(on) = 1.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.3 nC)planar stripe, DMOS technology. Low Crss ( typical 4.8 pF)This advanced technology
fqd4n20ltm.pdf

December 2000TMQFETQFETQFETQFETFQD4N20L / FQU4N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.2A, 200V, RDS(on) = 1.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.0 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: IPD075N03L | HGA053N06S | MMIS60R580PTH | UF830G-TMS-T | WFU5N60 | 2SK3591-01MR | 2SK2882
History: IPD075N03L | HGA053N06S | MMIS60R580PTH | UF830G-TMS-T | WFU5N60 | 2SK3591-01MR | 2SK2882



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