FQD5N15TF Datasheet. Specs and Replacement
Type Designator: FQD5N15TF 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 4.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 40 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: D-PAK
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FQD5N15TF datasheet
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fqd5n15tf fqd5n15tm.pdf 
October 2008 QFET 150V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 4.3A, 150V, RDS(on) = 0.8 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.4 nC) planar stripe, DMOS technology. Low Crss ( typical 7.5 pF) This advanced technology has been especial... See More ⇒
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November 2013 FQD5N15 N-Channel QFET MOSFET 150 V, 4.3 A, 800 m Description Features This N-Channel enhancement mode power MOSFET is 4.3 A, 150 V, RDS(on) = 800 m (Max.) @ VGS = 10 V, produced using Fairchild Semiconductor s proprietary ID = 2.15 A planar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 5.4 nC) MOSFET technology has been especially tai... See More ⇒
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
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May 2000 TM QFET QFET QFET QFET FQD5N30 / FQU5N30 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 4.4A, 300V, RDS(on) = 0.9 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 9.8 nC) planar stripe, DMOS technology. Low Crss ( typical 9.5 pF) This advanced technology h... See More ⇒
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TIGER ELECTRONIC CO.,LTD 500V N-Channel MOSFET FQD5N50 DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche an... See More ⇒
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April 2000 TM QFET QFET QFET QFET FQD5N20 / FQU5N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.8A, 200V, RDS(on) = 1.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology... See More ⇒
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April 2000 TM QFET QFET QFET QFET FQD5N40 / FQU5N40 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.4A, 400V, RDS(on) = 1.6 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 7.0 pF) This advanced technology ... See More ⇒
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fqd5n20tf.pdf
April 2000 TM QFET QFET QFET QFET FQD5N20 / FQU5N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.8A, 200V, RDS(on) = 1.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology... See More ⇒
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fqd5n30 fqu5n30.pdf
May 2000 TM QFET QFET QFET QFET FQD5N30 / FQU5N30 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 4.4A, 300V, RDS(on) = 0.9 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 9.8 nC) planar stripe, DMOS technology. Low Crss ( typical 9.5 pF) This advanced technology h... See More ⇒
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April 2000 TM QFET QFET QFET QFET FQD5N40 / FQU5N40 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.4A, 400V, RDS(on) = 1.6 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 7.0 pF) This advanced technology ... See More ⇒
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FQD5N60C / FQU5N60C N-Channel QFET MOSFET 600 V, 2.8 A, 2.5 Features Description 2.8 A, 600 V, RDS(on) = 2.5 (Max.) @ VGS = 10 V, ID = 1.4 A This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor s proprietary planar Low Gate Charge ( Typ. 15 nC) stripe and DMOS technology. This advanced MOSFET Low Crss (Typ. 6.5 pF) technology has bee... See More ⇒
Detailed specifications: FQD4N25TM, FQD4N50TF, FQD4N50TM, FQD4P25TF, FQD4P25TM, FQD4P40, FQD4P40TF, FQD4P40TM, 10N65, FQD5N15TM, FQD5N20LTF, FQD5N20LTM, FQD5N20TF, FQD5N30TF, FQD5N30TM, FQD5N40TF, FQD5N40TM
Keywords - FQD5N15TF MOSFET specs
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