FQD5P10TF Specs and Replacement

Type Designator: FQD5P10TF

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 70 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.05 Ohm

Package: D-PAK

FQD5P10TF substitution

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FQD5P10TF datasheet

 ..1. Size:705K  fairchild semi
 fqd5p10tf fqd5p10tm fqd5p10 fqu5p10.pdf pdf_icon

FQD5P10TF

October 2008 QFET FQD5P10 / FQU5P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -3.6A, -100V, RDS(on) = 1.05 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.3 nC) planar stripe, DMOS technology. Low Crss ( typical 18 pF) This advanced technology has been espec... See More ⇒

 9.1. Size:657K  fairchild semi
 fqd5p20tf fqd5p20tm fqd5p20 fqu5p20 fqu5p20tu.pdf pdf_icon

FQD5P10TF

October 2008 QFET FQD5P20 / FQU5P20 200V P-Channel MOSFET Features General Description -3.7A, -200V, RDS(on) = 1.4 @VGS = -10 V These P-Channel enhancement mode power field effect Low gate charge ( typical 10 nC) transistors are produced using Fairchild s proprietary, Low Crss ( typical 12 pF) planar stripe, DMOS technology. Fast switching This advanced techn... See More ⇒

Detailed specifications: FQD5N40TF, FQD5N40TM, FQD5N50, FQD5N50CTF, FQD5N50CTM, FQD5N50TF, FQD5N60CTF, FQD5N60CTM, P60NF06, FQD5P10TM, FQD5P20TF, FQD5P20TM, FQD630TF, FQD630TM, FQD6N25TF, FQD6N25TM, FQD6N40CTF

Keywords - FQD5P10TF MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.