All MOSFET. FQD5P10TM Datasheet

 

FQD5P10TM MOSFET. Datasheet pdf. Equivalent

Type Designator: FQD5P10TM

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 25 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 3.6 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 6.3 nC

Rise Time (tr): 70 nS

Drain-Source Capacitance (Cd): 70 pF

Maximum Drain-Source On-State Resistance (Rds): 1.05 Ohm

Package: D-PAK

FQD5P10TM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQD5P10TM Datasheet (PDF)

1.1. fqd5p10tf fqd5p10tm.pdf Size:705K _fairchild_semi

FQD5P10TM
FQD5P10TM

October 2008 QFET® FQD5P10 / FQU5P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -3.6A, -100V, RDS(on) = 1.05Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.3 nC) planar stripe, DMOS technology. • Low Crss ( typical 18 pF) This advanced technology has been espec

3.1. fqd5p10 fqu5p10.pdf Size:705K _fairchild_semi

FQD5P10TM
FQD5P10TM

October 2008 QFET FQD5P10 / FQU5P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -3.6A, -100V, RDS(on) = 1.05? @VGS = -10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.3 nC) planar stripe, DMOS technology. Low Crss ( typical 18 pF) This advanced technology has been especially tailored

 5.1. fqd5p20 fqu5p20.pdf Size:657K _fairchild_semi

FQD5P10TM
FQD5P10TM

October 2008 QFET FQD5P20 / FQU5P20 200V P-Channel MOSFET Features General Description -3.7A, -200V, RDS(on) = 1.4? @VGS = -10 V These P-Channel enhancement mode power field effect Low gate charge ( typical 10 nC) transistors are produced using Fairchilds proprietary, Low Crss ( typical 12 pF) planar stripe, DMOS technology. Fast switching This advanced technology has been e

5.2. fqd5p20tf fqd5p20tm.pdf Size:657K _fairchild_semi

FQD5P10TM
FQD5P10TM

October 2008 QFET® FQD5P20 / FQU5P20 200V P-Channel MOSFET Features General Description • -3.7A, -200V, RDS(on) = 1.4Ω @VGS = -10 V These P-Channel enhancement mode power field effect • Low gate charge ( typical 10 nC) transistors are produced using Fairchild’s proprietary, • Low Crss ( typical 12 pF) planar stripe, DMOS technology. • Fast switching This advanced techn

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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