All MOSFET. FQD5P10TM Datasheet

 

FQD5P10TM Datasheet and Replacement


   Type Designator: FQD5P10TM
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 3.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 6.3 nC
   tr ⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.05 Ohm
   Package: D-PAK
 

 FQD5P10TM substitution

   - MOSFET ⓘ Cross-Reference Search

 

FQD5P10TM Datasheet (PDF)

 ..1. Size:705K  fairchild semi
 fqd5p10tf fqd5p10tm fqd5p10 fqu5p10.pdf pdf_icon

FQD5P10TM

October 2008QFETFQD5P10 / FQU5P10 100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -3.6A, -100V, RDS(on) = 1.05 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.3 nC)planar stripe, DMOS technology. Low Crss ( typical 18 pF)This advanced technology has been espec

 9.1. Size:657K  fairchild semi
 fqd5p20tf fqd5p20tm fqd5p20 fqu5p20 fqu5p20tu.pdf pdf_icon

FQD5P10TM

October 2008QFETFQD5P20 / FQU5P20200V P-Channel MOSFETFeaturesGeneral Description -3.7A, -200V, RDS(on) = 1.4 @VGS = -10 VThese P-Channel enhancement mode power field effect Low gate charge ( typical 10 nC)transistors are produced using Fairchilds proprietary, Low Crss ( typical 12 pF)planar stripe, DMOS technology. Fast switchingThis advanced techn

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: TMD4N65AZ

Keywords - FQD5P10TM MOSFET datasheet

 FQD5P10TM cross reference
 FQD5P10TM equivalent finder
 FQD5P10TM lookup
 FQD5P10TM substitution
 FQD5P10TM replacement

 

 
Back to Top

 


 
.