FQD5P10TM PDF Specs and Replacement
Type Designator: FQD5P10TM
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 70 nS
Cossⓘ - Output Capacitance: 70 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.05 Ohm
Package: D-PAK
FQD5P10TM substitution
FQD5P10TM PDF Specs
fqd5p10tf fqd5p10tm fqd5p10 fqu5p10.pdf
October 2008 QFET FQD5P10 / FQU5P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -3.6A, -100V, RDS(on) = 1.05 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.3 nC) planar stripe, DMOS technology. Low Crss ( typical 18 pF) This advanced technology has been espec... See More ⇒
fqd5p20tf fqd5p20tm fqd5p20 fqu5p20 fqu5p20tu.pdf
October 2008 QFET FQD5P20 / FQU5P20 200V P-Channel MOSFET Features General Description -3.7A, -200V, RDS(on) = 1.4 @VGS = -10 V These P-Channel enhancement mode power field effect Low gate charge ( typical 10 nC) transistors are produced using Fairchild s proprietary, Low Crss ( typical 12 pF) planar stripe, DMOS technology. Fast switching This advanced techn... See More ⇒
Detailed specifications: FQD5N40TM , FQD5N50 , FQD5N50CTF , FQD5N50CTM , FQD5N50TF , FQD5N60CTF , FQD5N60CTM , FQD5P10TF , 75N75 , FQD5P20TF , FQD5P20TM , FQD630TF , FQD630TM , FQD6N25TF , FQD6N25TM , FQD6N40CTF , FQD6N40CTM .
Keywords - FQD5P10TM MOSFET specs
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