All MOSFET. IRFW830A Datasheet

 

IRFW830A Datasheet and Replacement


   Type Designator: IRFW830A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO263
 

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IRFW830A Datasheet (PDF)

 ..1. Size:213K  1
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IRFW830A

 ..2. Size:500K  samsung
 irfw830a.pdf pdf_icon

IRFW830A

Advanced Power MOSFETFEATURESBVDSS = 500 V Avalanche Rugged TechnologyRDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V2 Lower RDS(ON) : 1.169 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Cha

 9.1. Size:195K  1
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IRFW830A

 9.2. Size:216K  1
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IRFW830A

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Datasheet: IRFW634A , IRFW640A , IRFW644A , IRFW710A , IRFW720A , IRFW730A , IRFW740A , IRFW820A , 8205A , IRFW840A , IRFWZ14A , IRFWZ24A , IRFWZ34A , IRFWZ44A , IRFY044 , IRFY044C , IRFY120 .

History: FRM450H

Keywords - IRFW830A MOSFET datasheet

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