All MOSFET. FQD6N25TM Datasheet

 

FQD6N25TM MOSFET. Datasheet pdf. Equivalent


   Type Designator: FQD6N25TM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 4.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6.6 nC
   trⓘ - Rise Time: 65 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: D-PAK

 FQD6N25TM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQD6N25TM Datasheet (PDF)

 ..1. Size:798K  fairchild semi
 fqd6n25tf fqd6n25tm fqd6n25 fqu6n25.pdf

FQD6N25TM FQD6N25TM

October 2008QFETFQD6N25 / FQU6N25250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 4.4A, 250V, RDS(on) = 1.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.6 nC)planar stripe, DMOS technology. Low Crss ( typical 7.5 pF)This advanced technology has been especia

 9.1. Size:654K  fairchild semi
 fqd6n40ctf fqd6n40ctm fqd6n40c fqu6n40c fqu6n40ctu.pdf

FQD6N25TM FQD6N25TM

October 2008QFETFQD6N40C / FQU6N40C 400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.5A, 400V, RDS(on) = 1.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 16nC)planar stripe, DMOS technology. Low Crss ( typical 15pF)This advanced technology has been especiall

 9.2. Size:679K  fairchild semi
 fqd6n60ctm.pdf

FQD6N25TM FQD6N25TM

QFETFQD6N60C600V N-Channel MOSFETFeatures Description 4 A, 600 V, RDS(on) = 2.0 @ VGS = 10 V These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 16 nC )stripe, DMOS technology.This advanced technology has been especially tailored to Low Crss ( typical 7 pF)minimize on-s

 9.3. Size:757K  fairchild semi
 fqd6n50ctf fqd6n50ctm fqd6n50c fqu6n50c.pdf

FQD6N25TM FQD6N25TM

October 2008QFETFQD6N50C / FQU6N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.5A, 500V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge (typical 19nC)planar stripe, DMOS technology. Low Crss (typical 15pF)This advanced technology has been especially t

 9.4. Size:723K  fairchild semi
 fqd6n40tf fqd6n40tm.pdf

FQD6N25TM FQD6N25TM

April 2000TMQFETQFETQFETQFETFQD6N40 / FQU6N40400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 4.2A, 400V, RDS(on) = 1.15 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC)planar stripe, DMOS technology. Low Crss ( typical 9.5 pF)This advanced technolog

 9.5. Size:678K  fairchild semi
 fqd6n60c.pdf

FQD6N25TM FQD6N25TM

QFETFQD6N60C600V N-Channel MOSFETFeatures Description 4 A, 600 V, RDS(on) = 2.0 @ VGS = 10 V These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 16 nC )stripe, DMOS technology.This advanced technology has been especially tailored to Low Crss ( typical 7 pF)minimize on-s

 9.6. Size:648K  onsemi
 fqd6n50c.pdf

FQD6N25TM FQD6N25TM

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.7. Size:940K  onsemi
 fqd6n40c.pdf

FQD6N25TM FQD6N25TM

FQD6N40CN-Channel QFET MOSFET 400 V, 4.5 A, 1.0 DescriptionFeaturesThis N-Channel enhancement mode power MOSFET is produced using ON Semiconductors proprietary planar 4.5 A, 400 V, RDS(on) = 1.0 (Max.) @VGS = 10 V, ID = 2.25 Astripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 16 nC)technology has been especially tailored to reduce on-st

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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