FQD6N25TM Datasheet and Replacement
Type Designator: FQD6N25TM
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 50 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: D-PAK
FQD6N25TM substitution
FQD6N25TM Datasheet (PDF)
fqd6n25tf fqd6n25tm fqd6n25 fqu6n25.pdf

October 2008QFETFQD6N25 / FQU6N25250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 4.4A, 250V, RDS(on) = 1.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.6 nC)planar stripe, DMOS technology. Low Crss ( typical 7.5 pF)This advanced technology has been especia
fqd6n40ctf fqd6n40ctm fqd6n40c fqu6n40c fqu6n40ctu.pdf

October 2008QFETFQD6N40C / FQU6N40C 400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.5A, 400V, RDS(on) = 1.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 16nC)planar stripe, DMOS technology. Low Crss ( typical 15pF)This advanced technology has been especiall
fqd6n60ctm.pdf

QFETFQD6N60C600V N-Channel MOSFETFeatures Description 4 A, 600 V, RDS(on) = 2.0 @ VGS = 10 V These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 16 nC )stripe, DMOS technology.This advanced technology has been especially tailored to Low Crss ( typical 7 pF)minimize on-s
fqd6n50ctf fqd6n50ctm fqd6n50c fqu6n50c.pdf

October 2008QFETFQD6N50C / FQU6N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.5A, 500V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge (typical 19nC)planar stripe, DMOS technology. Low Crss (typical 15pF)This advanced technology has been especially t
Datasheet: FQD5N60CTM , FQD5P10TF , FQD5P10TM , FQD5P20TF , FQD5P20TM , FQD630TF , FQD630TM , FQD6N25TF , RU7088R , FQD6N40CTF , FQD6N40CTM , FQD6N40TF , FQD6N40TM , IRF2204LPBF , IRF2204PBF , IRF2204SPBF , IRF22N60C .
History: IPP65R280E6 | LSG60R280HT | FHP5N65C | UPA1872GR | BLQM15N06L-D | ISCNL256N | IRFS530A
Keywords - FQD6N25TM MOSFET datasheet
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History: IPP65R280E6 | LSG60R280HT | FHP5N65C | UPA1872GR | BLQM15N06L-D | ISCNL256N | IRFS530A



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