IRFW840A PDF and Equivalents Search

 

IRFW840A Specs and Replacement

Type Designator: IRFW840A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 142 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm

Package: TO263

IRFW840A substitution

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IRFW840A datasheet

 ..1. Size:195K  1
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IRFW840A

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 ..2. Size:504K  samsung
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IRFW840A

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 0.85 Rugged Gate Oxide Technology Lower Input Capacitance ID = 8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 500V 2 Lower RDS(ON) 0.638 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Char... See More ⇒

 9.1. Size:213K  1
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IRFW840A

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IRFW840A

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Detailed specifications: IRFW640A , IRFW644A , IRFW710A , IRFW720A , IRFW730A , IRFW740A , IRFW820A , IRFW830A , 4435 , IRFWZ14A , IRFWZ24A , IRFWZ34A , IRFWZ44A , IRFY044 , IRFY044C , IRFY120 , IRFY120C .

Keywords - IRFW840A MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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