All MOSFET. IRFW840A Datasheet

 

IRFW840A Datasheet and Replacement


   Type Designator: IRFW840A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 142 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: TO263
 

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IRFW840A Datasheet (PDF)

 ..1. Size:195K  1
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IRFW840A

 ..2. Size:504K  samsung
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IRFW840A

Advanced Power MOSFETFEATURESBVDSS = 500 V Avalanche Rugged TechnologyRDS(on) = 0.85 Rugged Gate Oxide Technology Lower Input CapacitanceID = 8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V2 Lower RDS(ON) : 0.638 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Char

 9.1. Size:213K  1
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IRFW840A

 9.2. Size:216K  1
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IRFW840A

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History: IRFW740A

Keywords - IRFW840A MOSFET datasheet

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