IRFWZ14A PDF and Equivalents Search

 

IRFWZ14A Specs and Replacement

Type Designator: IRFWZ14A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm

Package: TO263

IRFWZ14A substitution

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IRFWZ14A datasheet

 ..1. Size:273K  1
 irfwz14a irfiz14a.pdf pdf_icon

IRFWZ14A

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 irfwz34a irfiz34a.pdf pdf_icon

IRFWZ14A

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 9.2. Size:210K  samsung
 irfwz24a.pdf pdf_icon

IRFWZ14A

IRFW/IZ24A Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS(on) = 0.07 Rugged Gate Oxide Technology Lower Input Capacitance ID = 17 A Improved Gate Charge Extended Safe Operating Area D2-PAK I2-PAK 175 Operating Temperature 2 A (Max.) @ VDS = 60V Lower Leakage Current 10 Lower RDS(ON) 0.050 (Typ.) 1 1 2 3 3 1. Gate 2. Drai... See More ⇒

 9.3. Size:507K  samsung
 irfwz44a.pdf pdf_icon

IRFWZ14A

Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS(on) = 0.024 Rugged Gate Oxide Technology Lower Input Capacitance ID = 50 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature 2 Lower Leakage Current 10 A (Max.) @ VDS = 60V Lower RDS(ON) 0.020 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Max... See More ⇒

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Detailed specifications: IRFW644A , IRFW710A , IRFW720A , IRFW730A , IRFW740A , IRFW820A , IRFW830A , IRFW840A , SPP20N60C3 , IRFWZ24A , IRFWZ34A , IRFWZ44A , IRFY044 , IRFY044C , IRFY120 , IRFY120C , IRFY130 .

History: FHP3205C | IRFW840A

Keywords - IRFWZ14A MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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