All MOSFET. IRFWZ14A Datasheet

 

IRFWZ14A Datasheet and Replacement


   Type Designator: IRFWZ14A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 12 nC
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
   Package: TO263
 

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IRFWZ14A Datasheet (PDF)

 ..1. Size:273K  1
 irfwz14a irfiz14a.pdf pdf_icon

IRFWZ14A

 9.1. Size:291K  1
 irfwz34a irfiz34a.pdf pdf_icon

IRFWZ14A

 9.2. Size:210K  samsung
 irfwz24a.pdf pdf_icon

IRFWZ14A

IRFW/IZ24AAdvanced Power MOSFETFEATURESBVDSS = 60 V Avalanche Rugged TechnologyRDS(on) = 0.07 Rugged Gate Oxide Technology Lower Input CapacitanceID = 17 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK 175 Operating Temperature2A (Max.) @ VDS = 60V Lower Leakage Current : 10 Lower RDS(ON) : 0.050 (Typ.)112331. Gate 2. Drai

 9.3. Size:507K  samsung
 irfwz44a.pdf pdf_icon

IRFWZ14A

Advanced Power MOSFETFEATURESBVDSS = 60 V Avalanche Rugged TechnologyRDS(on) = 0.024 Rugged Gate Oxide Technology Lower Input CapacitanceID = 50 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature2 Lower Leakage Current : 10 A (Max.) @ VDS = 60V Lower RDS(ON) : 0.020 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Max

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Datasheet: IRFW644A , IRFW710A , IRFW720A , IRFW730A , IRFW740A , IRFW820A , IRFW830A , IRFW840A , IRF9540N , IRFWZ24A , IRFWZ34A , IRFWZ44A , IRFY044 , IRFY044C , IRFY120 , IRFY120C , IRFY130 .

Keywords - IRFWZ14A MOSFET datasheet

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