IRF2807ZSPBF MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF2807ZSPBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 170 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 75 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 71 nC
trⓘ - Rise Time: 79 nS
Cossⓘ - Output Capacitance: 420 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0094 Ohm
Package: TO-263
IRF2807ZSPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF2807ZSPBF Datasheet (PDF)
irf2807zlpbf irf2807zpbf irf2807zspbf.pdf
PD - 95488AIRF2807ZPbFIRF2807ZSPbFFeaturesIRF2807ZLPbF Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt RatingD 175C Operating TemperatureVDSS = 75V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 9.4mGID = 75ADescriptionS This HEXFET Power MOSFET utilizes the latestprocessing techni
irf2807zpbf irf2807zspbf irf2807zlpbf.pdf
PD - 95488AIRF2807ZPbFIRF2807ZSPbFFeaturesIRF2807ZLPbF Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt RatingD 175C Operating TemperatureVDSS = 75V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 9.4mGID = 75ADescriptionS This HEXFET Power MOSFET utilizes the latestprocessing techni
irf2807zs.pdf
Isc N-Channel MOSFET Transistor IRF2807ZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol
irf2807z.pdf
PD - 94659IRF2807ZAUTOMOTIVE MOSFETHEXFET Power MOSFETFeaturesD Advanced Process TechnologyVDSS = 75V Ultra Low On-Resistance Dynamic dv/dt RatingRDS(on) = 9.4m 175C Operating TemperatureG Fast Switching Repetitive Avalanche Allowed up to TjmaxID = 75ASDescriptionSpecifically designed for Automotive applications, this HEXFET PowerMOSFET utilizes th
irf2807zl.pdf
Isc N-Channel MOSFET Transistor IRF2807ZLFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 75
irf2807z.pdf
isc N-Channel MOSFET Transistor IRF2807Z, IIRF2807ZFEATURESStatic drain-source on-resistance:RDS(on) 8.4mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSynchronous Rectifier applicationsResonant mode power suppliesBattery powered circuitsABSO
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
