All MOSFET. IRFWZ24A Datasheet

 

IRFWZ24A Datasheet and Replacement


   Type Designator: IRFWZ24A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 44 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 17 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: TO263
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IRFWZ24A Datasheet (PDF)

 ..1. Size:210K  samsung
 irfwz24a.pdf pdf_icon

IRFWZ24A

IRFW/IZ24AAdvanced Power MOSFETFEATURESBVDSS = 60 V Avalanche Rugged TechnologyRDS(on) = 0.07 Rugged Gate Oxide Technology Lower Input CapacitanceID = 17 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK 175 Operating Temperature2A (Max.) @ VDS = 60V Lower Leakage Current : 10 Lower RDS(ON) : 0.050 (Typ.)112331. Gate 2. Drai

 9.1. Size:291K  1
 irfwz34a irfiz34a.pdf pdf_icon

IRFWZ24A

 9.2. Size:273K  1
 irfwz14a irfiz14a.pdf pdf_icon

IRFWZ24A

 9.3. Size:507K  samsung
 irfwz44a.pdf pdf_icon

IRFWZ24A

Advanced Power MOSFETFEATURESBVDSS = 60 V Avalanche Rugged TechnologyRDS(on) = 0.024 Rugged Gate Oxide Technology Lower Input CapacitanceID = 50 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature2 Lower Leakage Current : 10 A (Max.) @ VDS = 60V Lower RDS(ON) : 0.020 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Max

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History: 2SK2916 | 2N6847U | SIB411DK | 2N6901 | 2SK2973 | 2N6806 | SI9434BDY

Keywords - IRFWZ24A MOSFET datasheet

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