All MOSFET. IRF2907ZS-7PPBF Datasheet

 

IRF2907ZS-7PPBF MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF2907ZS-7PPBF

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 300 W

Maximum Drain-Source Voltage |Vds|: 75 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 160 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 170 nC

Rise Time (tr): 90 nS

Drain-Source Capacitance (Cd): 970 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0038 Ohm

Package: TO-263CA-7

IRF2907ZS-7PPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF2907ZS-7PPBF Datasheet (PDF)

1.1. auirf2907zs7ptl.pdf Size:293K _update-mosfet

IRF2907ZS-7PPBF
IRF2907ZS-7PPBF

PD - 96321 AUTOMOTIVE GRADE AUIRF2907ZS-7P HEXFET® Power MOSFET Features D V(BR)DSS 75V l Advanced Process Technology l Ultra Low On-Resistance RDS(on) typ. 3.0m Ω l 175°C Operating Temperature G l Fast Switching max. 3.8m Ω S l Repetitive Avalanche Allowed up to Tjmax S (Pin 2, 3, 5, 6, 7) ID (Silicon Limited) 180A l Lead-Free, RoHS Compliant G (Pin 1) l Automot

1.2. irf2907zs-7ppbf.pdf Size:295K _international_rectifier

IRF2907ZS-7PPBF
IRF2907ZS-7PPBF

PD - 97031D IRF2907ZS-7PPbF Features HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l 175°C Operating Temperature VDSS = 75V l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 3.8mΩ G Description S ID = 160A This HEXFET® Power MOSFET utilizes the latest S (Pin 2, 3, 5, 6, 7) processing techniques and advanced packaging G (

 1.3. irf2907zlpbf irf2907zpbf irf2907zspbf.pdf Size:420K _international_rectifier

IRF2907ZS-7PPBF
IRF2907ZS-7PPBF

PD - 95489D IRF2907ZPbF IRF2907ZSPbF IRF2907ZLPbF Features HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 75V l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 4.5mΩ G l Lead-Free ID = 160A∗ S Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achie

1.4. irf2907zs.pdf Size:258K _inchange_semiconductor

IRF2907ZS-7PPBF
IRF2907ZS-7PPBF

Isc N-Channel MOSFET Transistor IRF2907ZS ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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