IRF2907ZS-7PPBF PDF Specs and Replacement
Type Designator: IRF2907ZS-7PPBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 160 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 90 nS
Cossⓘ - Output Capacitance: 970 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm
Package: TO-263CA-7
IRF2907ZS-7PPBF substitution
IRF2907ZS-7PPBF PDF Specs
irf2907zs-7ppbf.pdf
PD - 97031D IRF2907ZS-7PPbF Features HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l 175 C Operating Temperature VDSS = 75V l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 3.8m G Description S ID = 160A This HEXFET Power MOSFET utilizes the latest S (Pin 2, 3, 5, 6, 7) processing techniques and advanced packaging G (... See More ⇒
auirf2907zs-7p.pdf
PD - 96321 AUTOMOTIVE GRADE AUIRF2907ZS-7P HEXFET Power MOSFET Features D V(BR)DSS 75V l Advanced Process Technology l Ultra Low On-Resistance RDS(on) typ. 3.0m l 175 C Operating Temperature G l Fast Switching max. 3.8m S l Repetitive Avalanche Allowed up to Tjmax S (Pin 2, 3, 5, 6, 7) ID (Silicon Limited) 180A l Lead-Free, RoHS Compliant G (Pin 1) l Automot... See More ⇒
irf2907zpbf irf2907zspbf irf2907zlpbf.pdf
PD - 95489D IRF2907ZPbF IRF2907ZSPbF IRF2907ZLPbF Features HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 75V l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 4.5m G l Lead-Free ID = 160A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achie... See More ⇒
irf2907zlpbf irf2907zpbf irf2907zspbf.pdf
PD - 95489D IRF2907ZPbF IRF2907ZSPbF IRF2907ZLPbF Features HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 75V l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 4.5m G l Lead-Free ID = 160A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achie... See More ⇒
Detailed specifications: IRF2807ZLPBF , IRF2807ZPBF , IRF2807ZSPBF , IRF2903ZLPBF , IRF2903ZPBF , IRF2903ZSPBF , IRF2907ZLPBF , IRF2907ZPBF , IRF640 , IRF2907ZSPBF , IRF3610SPBF , IRF3703PBF , IRF3704L , IRF3704LPBF , IRF3704PBF , IRF3704SPBF , IRF3704ZCLPBF .
History: WFN1N60N
Keywords - IRF2907ZS-7PPBF MOSFET specs
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IRF2907ZS-7PPBF replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: WFN1N60N
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