All MOSFET. IRF2907ZSPBF Datasheet

 

IRF2907ZSPBF Datasheet and Replacement


   Type Designator: IRF2907ZSPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 160 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 140 nS
   Cossⓘ - Output Capacitance: 970 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: TO-263
 

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IRF2907ZSPBF Datasheet (PDF)

 ..1. Size:420K  international rectifier
 irf2907zpbf irf2907zspbf irf2907zlpbf.pdf pdf_icon

IRF2907ZSPBF

PD - 95489DIRF2907ZPbFIRF2907ZSPbFIRF2907ZLPbFFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 75Vl 175C Operating Temperaturel Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 4.5mGl Lead-FreeID = 160ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achie

 ..2. Size:420K  international rectifier
 irf2907zlpbf irf2907zpbf irf2907zspbf.pdf pdf_icon

IRF2907ZSPBF

PD - 95489DIRF2907ZPbFIRF2907ZSPbFIRF2907ZLPbFFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 75Vl 175C Operating Temperaturel Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 4.5mGl Lead-FreeID = 160ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achie

 5.1. Size:293K  international rectifier
 auirf2907zs-7p.pdf pdf_icon

IRF2907ZSPBF

PD - 96321AUTOMOTIVE GRADEAUIRF2907ZS-7PHEXFET Power MOSFETFeaturesDV(BR)DSS75Vl Advanced Process Technologyl Ultra Low On-ResistanceRDS(on) typ.3.0ml 175C Operating TemperatureGl Fast Switchingmax. 3.8mSl Repetitive Avalanche Allowed up to TjmaxS (Pin 2, 3, 5, 6, 7)ID (Silicon Limited)180A l Lead-Free, RoHS CompliantG (Pin 1)l Automot

 5.2. Size:295K  international rectifier
 irf2907zs-7ppbf.pdf pdf_icon

IRF2907ZSPBF

PD - 97031DIRF2907ZS-7PPbFFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl 175C Operating Temperature VDSS = 75Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 3.8mGDescriptionSID = 160AThis HEXFET Power MOSFET utilizes the latestS (Pin 2, 3, 5, 6, 7)processing techniques and advanced packaging G (

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Datasheet: IRF2807ZPBF , IRF2807ZSPBF , IRF2903ZLPBF , IRF2903ZPBF , IRF2903ZSPBF , IRF2907ZLPBF , IRF2907ZPBF , IRF2907ZS-7PPBF , IRF1404 , IRF3610SPBF , IRF3703PBF , IRF3704L , IRF3704LPBF , IRF3704PBF , IRF3704SPBF , IRF3704ZCLPBF , IRF3704ZLPBF .

History: BLS60R150F-B | STP36NF06FP

Keywords - IRF2907ZSPBF MOSFET datasheet

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