IRF2907ZSPBF Specs and Replacement

Type Designator: IRF2907ZSPBF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 160 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 140 nS

Cossⓘ - Output Capacitance: 970 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm

Package: TO-263

IRF2907ZSPBF substitution

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IRF2907ZSPBF datasheet

 ..1. Size:420K  international rectifier
 irf2907zpbf irf2907zspbf irf2907zlpbf.pdf pdf_icon

IRF2907ZSPBF

PD - 95489D IRF2907ZPbF IRF2907ZSPbF IRF2907ZLPbF Features HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 75V l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 4.5m G l Lead-Free ID = 160A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achie... See More ⇒

 ..2. Size:420K  international rectifier
 irf2907zlpbf irf2907zpbf irf2907zspbf.pdf pdf_icon

IRF2907ZSPBF

PD - 95489D IRF2907ZPbF IRF2907ZSPbF IRF2907ZLPbF Features HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 75V l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 4.5m G l Lead-Free ID = 160A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achie... See More ⇒

 5.1. Size:293K  international rectifier
 auirf2907zs-7p.pdf pdf_icon

IRF2907ZSPBF

PD - 96321 AUTOMOTIVE GRADE AUIRF2907ZS-7P HEXFET Power MOSFET Features D V(BR)DSS 75V l Advanced Process Technology l Ultra Low On-Resistance RDS(on) typ. 3.0m l 175 C Operating Temperature G l Fast Switching max. 3.8m S l Repetitive Avalanche Allowed up to Tjmax S (Pin 2, 3, 5, 6, 7) ID (Silicon Limited) 180A l Lead-Free, RoHS Compliant G (Pin 1) l Automot... See More ⇒

 5.2. Size:295K  international rectifier
 irf2907zs-7ppbf.pdf pdf_icon

IRF2907ZSPBF

PD - 97031D IRF2907ZS-7PPbF Features HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l 175 C Operating Temperature VDSS = 75V l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 3.8m G Description S ID = 160A This HEXFET Power MOSFET utilizes the latest S (Pin 2, 3, 5, 6, 7) processing techniques and advanced packaging G (... See More ⇒

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Detailed specifications: IRF2807ZPBF, IRF2807ZSPBF, IRF2903ZLPBF, IRF2903ZPBF, IRF2903ZSPBF, IRF2907ZLPBF, IRF2907ZPBF, IRF2907ZS-7PPBF, IRF1404, IRF3610SPBF, IRF3703PBF, IRF3704L, IRF3704LPBF, IRF3704PBF, IRF3704SPBF, IRF3704ZCLPBF, IRF3704ZLPBF

Keywords - IRF2907ZSPBF MOSFET specs

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