IRF3704ZLPBF
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF3704ZLPBF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 57
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.55
V
|Id|ⓘ - Maximum Drain Current: 67
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 8.7
nC
trⓘ - Rise Time: 38
nS
Cossⓘ -
Output Capacitance: 390
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0079
Ohm
Package:
TO-262
IRF3704ZLPBF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF3704ZLPBF
Datasheet (PDF)
..1. Size:360K international rectifier
irf3704zlpbf irf3704zpbf irf3704zspbf.pdf
PD - 95463IRF3704ZPbFIRF3704ZSPbFIRF3704ZLPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxConverters for Computer Processor Power Qgl Lead-Free20V 7.9m: 8.7nCBenefitsl Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Characterized Avalanche Voltageand CurrentTO-220ABD2Pak TO-262IRF3704ZIRF3704ZS IRF3704ZLAbso
6.1. Size:352K international rectifier
irf3704zcspbf.pdf
PD - 95107IRF3704ZCSPbFIRF3704ZCLPbFAppIicationsHEXFET Power MOSFETl High Frequency Synchronous BuckConverters for Computer Processor Power VDSS RDS(on) maxQgl Lead-Free20V 7.9m: 8.7nCBenefitsl Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Characterized Avalanche Voltageand CurrentTO-262D2PakIRF3704ZCLPbFIRF3704ZCSPbFAbsoIute Maximum RatingsPa
6.2. Size:352K international rectifier
irf3704zclpbf.pdf
PD - 95107IRF3704ZCSPbFIRF3704ZCLPbFAppIicationsHEXFET Power MOSFETl High Frequency Synchronous BuckConverters for Computer Processor Power VDSS RDS(on) maxQgl Lead-Free20V 7.9m: 8.7nCBenefitsl Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Characterized Avalanche Voltageand CurrentTO-262D2PakIRF3704ZCLPbFIRF3704ZCSPbFAbsoIute Maximum RatingsPa
6.3. Size:246K inchange semiconductor
irf3704z.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF3704ZIIRF3704ZFEATURESLow drain-source on-resistance:RDS(on) 7.9mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RA
6.4. Size:258K inchange semiconductor
irf3704zs.pdf
Isc N-Channel MOSFET Transistor IRF3704ZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol
6.5. Size:252K inchange semiconductor
irf3704zcs.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF3704ZCSFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIM
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