Справочник MOSFET. IRF3704ZLPBF

 

IRF3704ZLPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRF3704ZLPBF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 57 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.55 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 67 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 8.7 nC
   trⓘ - Время нарастания: 38 ns
   Cossⓘ - Выходная емкость: 390 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0079 Ohm
   Тип корпуса: TO-262

 Аналог (замена) для IRF3704ZLPBF

 

 

IRF3704ZLPBF Datasheet (PDF)

 ..1. Size:360K  international rectifier
 irf3704zlpbf irf3704zpbf irf3704zspbf.pdf

IRF3704ZLPBF IRF3704ZLPBF

PD - 95463IRF3704ZPbFIRF3704ZSPbFIRF3704ZLPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxConverters for Computer Processor Power Qgl Lead-Free20V 7.9m: 8.7nCBenefitsl Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Characterized Avalanche Voltageand CurrentTO-220ABD2Pak TO-262IRF3704ZIRF3704ZS IRF3704ZLAbso

 6.1. Size:352K  international rectifier
 irf3704zcspbf.pdf

IRF3704ZLPBF IRF3704ZLPBF

PD - 95107IRF3704ZCSPbFIRF3704ZCLPbFAppIicationsHEXFET Power MOSFETl High Frequency Synchronous BuckConverters for Computer Processor Power VDSS RDS(on) maxQgl Lead-Free20V 7.9m: 8.7nCBenefitsl Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Characterized Avalanche Voltageand CurrentTO-262D2PakIRF3704ZCLPbFIRF3704ZCSPbFAbsoIute Maximum RatingsPa

 6.2. Size:352K  international rectifier
 irf3704zclpbf.pdf

IRF3704ZLPBF IRF3704ZLPBF

PD - 95107IRF3704ZCSPbFIRF3704ZCLPbFAppIicationsHEXFET Power MOSFETl High Frequency Synchronous BuckConverters for Computer Processor Power VDSS RDS(on) maxQgl Lead-Free20V 7.9m: 8.7nCBenefitsl Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Characterized Avalanche Voltageand CurrentTO-262D2PakIRF3704ZCLPbFIRF3704ZCSPbFAbsoIute Maximum RatingsPa

 6.3. Size:246K  inchange semiconductor
 irf3704z.pdf

IRF3704ZLPBF IRF3704ZLPBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF3704ZIIRF3704ZFEATURESLow drain-source on-resistance:RDS(on) 7.9mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RA

 6.4. Size:258K  inchange semiconductor
 irf3704zs.pdf

IRF3704ZLPBF IRF3704ZLPBF

Isc N-Channel MOSFET Transistor IRF3704ZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol

 6.5. Size:252K  inchange semiconductor
 irf3704zcs.pdf

IRF3704ZLPBF IRF3704ZLPBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF3704ZCSFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIM

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