IRF3708SPBF
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF3708SPBF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 87
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 62
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 24
nC
trⓘ - Rise Time: 50
nS
Cossⓘ -
Output Capacitance: 707
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012
Ohm
Package:
TO-263
IRF3708SPBF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF3708SPBF
Datasheet (PDF)
..1. Size:277K international rectifier
irf3708pbf irf3708spbf.pdf 
PD - 95363IRF3708PbFSMPS MOSFET IRF3708SPbFIRF3708LPbFApplicationsHEXFET Power MOSFETl High Frequency DC-DC Isolated Converterswith Synchronous Rectification for TelecomVDSS RDS(on) max IDand Industrial Use 30V 12m 62Al High Frequency Buck Converters forComputer Processor Powerl Lead-FreeBenefitsl Ultra-Low Gate Impedancel Very Low RDS(on) at 4.5V VGSl Ful
..2. Size:277K infineon
irf3708pbf irf3708spbf irf3708lpbf.pdf
PD - 95363IRF3708PbFSMPS MOSFET IRF3708SPbFIRF3708LPbFApplicationsHEXFET Power MOSFETl High Frequency DC-DC Isolated Converterswith Synchronous Rectification for TelecomVDSS RDS(on) max IDand Industrial Use 30V 12m 62Al High Frequency Buck Converters forComputer Processor Powerl Lead-FreeBenefitsl Ultra-Low Gate Impedancel Very Low RDS(on) at 4.5V VGSl Ful
6.1. Size:138K international rectifier
irf3708s irf3708l.pdf
PD - 93938BIRF3708SMPS MOSFET IRF3708SIRF3708LApplicationsHEXFET Power MOSFET High Frequency DC-DC Isolated Converterswith Synchronous Rectification for TelecomVDSS RDS(on) max IDand Industrial Use 30V 12m 62A High Frequency Buck Converters forComputer Processor PowerBenefits Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanch
6.2. Size:271K inchange semiconductor
irf3708s.pdf
isc N-Channel MOSFET Transistor IRF3708SDESCRIPTIONStatic drain-source on-resistance:RDS(on) 12m@V = 10VGSDrain Source Voltage: V = 30V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .High Frequency Synchronous Buck Converters for ComputerProcessor Power.ABSOLUTE MAXIMUM RA
7.1. Size:138K international rectifier
irf3708.pdf
PD - 93938BIRF3708SMPS MOSFET IRF3708SIRF3708LApplicationsHEXFET Power MOSFET High Frequency DC-DC Isolated Converterswith Synchronous Rectification for TelecomVDSS RDS(on) max IDand Industrial Use 30V 12m 62A High Frequency Buck Converters forComputer Processor PowerBenefits Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanch
7.2. Size:142K international rectifier
irf3708l.pdf
PD - 93938BIRF3708SMPS MOSFET IRF3708SIRF3708LApplicationsHEXFET Power MOSFET High Frequency DC-DC Isolated Converterswith Synchronous Rectification for TelecomVDSS RDS(on) max IDand Industrial Use 30V 12m 62A High Frequency Buck Converters forComputer Processor PowerBenefits Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanch
7.3. Size:246K inchange semiconductor
irf3708.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF3708 IIRF3708FEATURESStatic drain-source on-resistance:RDS(on) 12mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R
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