IRF3808SPBF Specs and Replacement

Type Designator: IRF3808SPBF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 106 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 140 nS

Cossⓘ - Output Capacitance: 890 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm

Package: TO-263

IRF3808SPBF substitution

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IRF3808SPBF datasheet

 ..1. Size:309K  international rectifier
 irf3808lpbf irf3808spbf.pdf pdf_icon

IRF3808SPBF

PD - 95467A IRF3808SPbF IRF3808LPbF Typical Applications HEXFET Power MOSFET Industrial Motor Drive D VDSS = 75V Benefits Advanced Process Technology Ultra Low On-Resistance RDS(on) = 0.007 G Dynamic dv/dt Rating 175 C Operating Temperature ID = 106A Fast Switching S Repetitive Avalanche Allowed up to Tjmax Lead-Free Description This Advanced Planar Stripe H... See More ⇒

 6.1. Size:161K  international rectifier
 irf3808s.pdf pdf_icon

IRF3808SPBF

PD - 94338A IRF3808S AUTOMOTIVE MOSFET IRF3808L Typical Applications HEXFET Power MOSFET Integrated Starter Alternator 42 Volts Automotive Electrical Systems D Benefits VDSS = 75V Advanced Process Technology Ultra Low On-Resistance RDS(on) = 0.007 Dynamic dv/dt Rating G 175 C Operating Temperature ID = 106AV Fast Switching S Repetitive Avalanche Allowed up to T... See More ⇒

 6.2. Size:220K  international rectifier
 auirf3808s.pdf pdf_icon

IRF3808SPBF

PD - 97698A AUTOMOTIVE GRADE AUIRF3808S HEXFET Power MOSFET Features Advanced Planar Technology D Low On-Resistance VDSS 75V Dynamic dV/dT Rating RDS(on) typ. 5.9m 175 C Operating Temperature G max. 7.0m Fast Switching S Fully Avalanche Rated ID 106A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive ... See More ⇒

 6.3. Size:258K  inchange semiconductor
 irf3808s.pdf pdf_icon

IRF3808SPBF

Isc N-Channel MOSFET Transistor IRF3808S FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt... See More ⇒

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Detailed specifications: IRF3805L-7PPBF, IRF3805LPBF, IRF3805PBF, IRF3805S-7PPBF, IRF3805SPBF, IRF3808L, IRF3808LPBF, IRF3808PBF, STF13NM60N, FQD6N50CTF, FQD6N50CTM, FQD6N60CTM, FQD6P25TF, FQD6P25TM, FQD7N10LTF, FQD7N10LTM, FQD7N10TM

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.