FQD6N60CTM MOSFET. Datasheet pdf. Equivalent
Type Designator: FQD6N60CTM
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 80 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 4 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 16 nC
Rise Time (tr): 45 nS
Drain-Source Capacitance (Cd): 65 pF
Maximum Drain-Source On-State Resistance (Rds): 2 Ohm
Package: D-PAK
FQD6N60CTM Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQD6N60CTM Datasheet (PDF)
1.1. fqd6n60ctm.pdf 
Size:679K _fairchild_semi
® QFET FQD6N60C 600V N-Channel MOSFET Features Description • 4 A, 600 V, RDS(on) = 2.0 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( typical 16 nC ) stripe, DMOS technology. This advanced technology has been especially tailored to • Low Crss ( typical 7 pF) minimize on-s
2.1. fqd6n60c.pdf Size:678K _fairchild_semi
QFET FQD6N60C 600V N-Channel MOSFET Features Description 4 A, 600 V, RDS(on) = 2.0 ? @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 16 nC ) stripe, DMOS technology. This advanced technology has been especially tailored to Low Crss ( typical 7 pF) minimize on-state resistanc
5.1. fqd6n40ctf fqd6n40ctm.pdf Size:654K _fairchild_semi
October 2008 QFET® FQD6N40C / FQU6N40C 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.5A, 400V, RDS(on) = 1.0 Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 16nC) planar stripe, DMOS technology. • Low Crss ( typical 15pF) This advanced technology has been especiall
5.2. fqd6n25tf fqd6n25tm.pdf Size:798K _fairchild_semi
October 2008 QFET® FQD6N25 / FQU6N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 4.4A, 250V, RDS(on) = 1.0Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.6 nC) planar stripe, DMOS technology. • Low Crss ( typical 7.5 pF) This advanced technology has been especia
5.3. fqd6n40c fqu6n40c.pdf Size:654K _fairchild_semi
October 2008 QFET FQD6N40C / FQU6N40C 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.5A, 400V, RDS(on) = 1.0 ? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 16nC) planar stripe, DMOS technology. Low Crss ( typical 15pF) This advanced technology has been especially tailored to
5.4. fqd6n50c fqu6n50c.pdf Size:757K _fairchild_semi
October 2008 QFET FQD6N50C / FQU6N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.5A, 500V, RDS(on) = 1.2 ? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge (typical 19nC) planar stripe, DMOS technology. Low Crss (typical 15pF) This advanced technology has been especially tailored to
5.5. fqd6n50ctf fqd6n50ctm.pdf Size:757K _fairchild_semi
October 2008 QFET® FQD6N50C / FQU6N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.5A, 500V, RDS(on) = 1.2 Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge (typical 19nC) planar stripe, DMOS technology. • Low Crss (typical 15pF) This advanced technology has been especially t
5.6. fqd6n25 fqu6n25.pdf Size:798K _fairchild_semi
October 2008 QFET FQD6N25 / FQU6N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 4.4A, 250V, RDS(on) = 1.0? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.6 nC) planar stripe, DMOS technology. Low Crss ( typical 7.5 pF) This advanced technology has been especially tailored t
5.7. fqd6n40tf fqd6n40tm.pdf Size:723K _fairchild_semi
April 2000 TM QFET QFET QFET QFET FQD6N40 / FQU6N40 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 4.2A, 400V, RDS(on) = 1.15Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 13 nC) planar stripe, DMOS technology. • Low Crss ( typical 9.5 pF) This advanced technolog
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
