All MOSFET. FQD6P25TF Datasheet

 

FQD6P25TF Datasheet and Replacement


   Type Designator: FQD6P25TF
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
   Package: D-PAK
 

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FQD6P25TF Datasheet (PDF)

 ..1. Size:624K  fairchild semi
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FQD6P25TF

October 2008QFETFQD6P25 / FQU6P25 250V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -4.7A, -250V, RDS(on) = 1.1 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 21 nC)planar stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been especia

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