FQD6P25TF Specs and Replacement
Type Designator: FQD6P25TF
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 55 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 75 nS
Cossⓘ - Output Capacitance: 115 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
Package: D-PAK
FQD6P25TF substitution
FQD6P25TF datasheet
fqd6p25tf fqd6p25tm fqu6p25tu.pdf
October 2008 QFET FQD6P25 / FQU6P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -4.7A, -250V, RDS(on) = 1.1 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 21 nC) planar stripe, DMOS technology. Low Crss ( typical 20 pF) This advanced technology has been especia... See More ⇒
Detailed specifications: IRF3805SPBF , IRF3808L , IRF3808LPBF , IRF3808PBF , IRF3808SPBF , FQD6N50CTF , FQD6N50CTM , FQD6N60CTM , P60NF06 , FQD6P25TM , FQD7N10LTF , FQD7N10LTM , FQD7N10TM , FQD7N20LTF , FQD7N20LTM , FQD7N20TF , FQD7N20TM .
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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