All MOSFET. FQD6P25TF Datasheet

 

FQD6P25TF Datasheet and Replacement


   Type Designator: FQD6P25TF
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
   Package: D-PAK
 

 FQD6P25TF substitution

   - MOSFET ⓘ Cross-Reference Search

 

FQD6P25TF Datasheet (PDF)

 ..1. Size:624K  fairchild semi
 fqd6p25tf fqd6p25tm fqu6p25tu.pdf pdf_icon

FQD6P25TF

October 2008QFETFQD6P25 / FQU6P25 250V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -4.7A, -250V, RDS(on) = 1.1 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 21 nC)planar stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been especia

Datasheet: IRF3805SPBF , IRF3808L , IRF3808LPBF , IRF3808PBF , IRF3808SPBF , FQD6N50CTF , FQD6N50CTM , FQD6N60CTM , AO3401 , FQD6P25TM , FQD7N10LTF , FQD7N10LTM , FQD7N10TM , FQD7N20LTF , FQD7N20LTM , FQD7N20TF , FQD7N20TM .

History: FTK2N65P

Keywords - FQD6P25TF MOSFET datasheet

 FQD6P25TF cross reference
 FQD6P25TF equivalent finder
 FQD6P25TF lookup
 FQD6P25TF substitution
 FQD6P25TF replacement

 

 
Back to Top

 


 
.