All MOSFET. FQD7N30TF Datasheet

 

FQD7N30TF MOSFET. Datasheet pdf. Equivalent

Type Designator: FQD7N30TF

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 300 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 5.5 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 13 nC

Rise Time (tr): 75 nS

Drain-Source Capacitance (Cd): 100 pF

Maximum Drain-Source On-State Resistance (Rds): 0.7 Ohm

Package: D-PAK

FQD7N30TF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQD7N30TF Datasheet (PDF)

1.1. fqd7n30tf fqd7n30tm fqd7n30 fqu7n30.pdf Size:581K _fairchild_semi

FQD7N30TF
FQD7N30TF

April 2000 TM QFET QFET QFET QFET FQD7N30 / FQU7N30 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 5.5A, 300V, RDS(on) = 0.7Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 13 nC) planar stripe, DMOS technology. • Low Crss ( typical 12 pF) This advanced technology h

5.1. fqd7n10ltf fqd7n10ltm fqd7n10l fqu7n10l fqu7n10ltu.pdf Size:625K _fairchild_semi

FQD7N30TF
FQD7N30TF

October 2008 QFET® FQD7N10L / FQU7N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 5.8A, 100V, RDS(on) = 0.35Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.6 nC) planar stripe, DMOS technology. • Low Crss ( typical 12 pF) This advanced technology is especia

5.2. fqd7n10tm.pdf Size:589K _fairchild_semi

FQD7N30TF
FQD7N30TF

October 2008 QFET® FQD7N10 / FQU7N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 5.8A, 100V, RDS(on) = 0.35Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 10 pF) This advanced technology is especially tail

 5.3. fqd7n20l fqu7n20l.pdf Size:569K _fairchild_semi

FQD7N30TF
FQD7N30TF

December 2000 TM QFET QFET QFET QFET FQD7N20L / FQU7N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 5.5A, 200V, RDS(on) = 0.75Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 8.5 pF) This advanced

5.4. fqd7n20tf fqd7n20tm fqd7n20 fqu7n20.pdf Size:802K _fairchild_semi

FQD7N30TF
FQD7N30TF

October 2008 QFET® FQD7N20 / FQU7N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 5.3A, 200V, RDS(on) = 0.69Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 8.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 9.0 pF) This advanced technology has been especia

 5.5. fqd7n20ltf fqd7n20ltm.pdf Size:622K _fairchild_semi

FQD7N30TF
FQD7N30TF

October 2008 QFET® FQD7N20L / FQU7N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 5.5A, 200V, RDS(on) = 0.75Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 8.5 pF) This advanced technology is especi

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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