2SJ204 Datasheet. Specs and Replacement
Type Designator: 2SJ204 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.2 A
Tj ⓘ - Maximum Junction Temperature: 80 °C
Electrical Characteristics
tr ⓘ - Rise Time: 240 nS
Cossⓘ - Output Capacitance: 27 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
Package: SC59
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2SJ204 substitution
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2SJ204 datasheet
2sj204.pdf
SMD Type MOSFET P-Channel MOSFET 2SJ204 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) =-30V 1 2 ID =-200m A +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 RDS(ON) 8 (VGS =-10V) RDS(ON) 13 (VGS =-4V) Compementary to 2SK1582 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit... See More ⇒
2sj204-3.pdf
SMD Type MOSFET P-Channel MOSFET 2SJ204 SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) =-30V ID =-200m A 1 2 +0.02 RDS(ON) 8 (VGS =-10V) +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 RDS(ON) 13 (VGS =-4V) Compementary to 2SK1582 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Ratin... See More ⇒
2sj200.pdf
2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application Unit mm High breakdown voltage VDSS = -180 V High forward transfer admittance Y = 4.0 S (typ.) fs Complementary to 2SK1529 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source voltage VDSS -180 V Gate-source voltage VGSS 20 V Dr... See More ⇒
Detailed specifications: 2SJ184, 2SJ185, 2SJ196, 2SJ197, 2SJ198, 2SJ199, 2SJ202, 2SJ203, 2SK3878, 2SJ205, 2SJ206, 2SJ207, 2SJ208, 2SJ209, 2SJ210, 2SJ211, 2SJ212
Keywords - 2SJ204 MOSFET specs
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