All MOSFET. FQI10N20CTU Datasheet

 

FQI10N20CTU MOSFET. Datasheet pdf. Equivalent

Type Designator: FQI10N20CTU

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 72 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 9.5 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 20 nC

Rise Time (tr): 92 nS

Drain-Source Capacitance (Cd): 97 pF

Maximum Drain-Source On-State Resistance (Rds): 0.36 Ohm

Package: I2-PAK

FQI10N20CTU Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQI10N20CTU Datasheet (PDF)

1.1. fqi10n20ctu.pdf Size:608K _fairchild_semi

FQI10N20CTU
FQI10N20CTU

TM QFET FQB10N20C/FQI10N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 9.5A, 200V, RDS(on) = 0.36Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 20 nC) planar stripe, DMOS technology. • Low Crss ( typical 40.5 pF) This advanced technology has been especially tailore

4.1. fqi10n60ctu.pdf Size:614K _fairchild_semi

FQI10N20CTU
FQI10N20CTU

TM QFET FQB10N60C / FQI10N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 9.5A, 600V, RDS(on) = 0.73Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 44 nC) planar stripe, DMOS technology. • Low Crss ( typical 18 pF) This advanced technology has been especially tailore

 

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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