All MOSFET. FQI10N20CTU Datasheet

 

FQI10N20CTU Datasheet and Replacement


   Type Designator: FQI10N20CTU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 72 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 9.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 92 nS
   Cossⓘ - Output Capacitance: 97 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
   Package: I2-PAK
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FQI10N20CTU Datasheet (PDF)

 ..1. Size:608K  fairchild semi
 fqi10n20ctu.pdf pdf_icon

FQI10N20CTU

TMQFETFQB10N20C/FQI10N20C200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.5A, 200V, RDS(on) = 0.36 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 20 nC)planar stripe, DMOS technology. Low Crss ( typical 40.5 pF)This advanced technology has been especially tailore

 8.1. Size:614K  fairchild semi
 fqb10n60ctm fqi10n60ctu.pdf pdf_icon

FQI10N20CTU

TMQFETFQB10N60C / FQI10N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.5A, 600V, RDS(on) = 0.73 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 44 nC)planar stripe, DMOS technology. Low Crss ( typical 18 pF)This advanced technology has been especially tailore

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: FDP5680 | SM3308NSQA | MTN15N50F3 | CHM4301JGP | DH300N08I | SSM9585GP | RFP14N05

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