FQI10N20CTU MOSFET PDF: N-Ch, 200V, 9.5A. Datasheet. Full specification with pinout and replacement list

FQI10N20CTU Specs and Replacement

   Type Designator: FQI10N20CTU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 72 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 92 nS
   Cossⓘ - Output Capacitance: 97 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
   Package: I2-PAK

FQI10N20CTU substitution

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FQI10N20CTU datasheet

..1. Size:608K fairchild semi
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TM QFET FQB10N20C/FQI10N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9.5A, 200V, RDS(on) = 0.36 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 20 nC) planar stripe, DMOS technology. Low Crss ( typical 40.5 pF) This advanced technology has been especially tailore... See More ⇒

8.1. Size:614K fairchild semi
fqb10n60ctm fqi10n60ctu.pdf pdf_icon

TM QFET FQB10N60C / FQI10N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9.5A, 600V, RDS(on) = 0.73 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 44 nC) planar stripe, DMOS technology. Low Crss ( typical 18 pF) This advanced technology has been especially tailore... See More ⇒

Detailed specifications: FQD9N25TF , FQD9N25TM , FQE10N20CTU , FQH140N10 , FQH18N50V2 , FQH44N10F133 , FQH70N10 , FQH90N15 , IRF740 , FQI10N60CTU , FQI11N40TU , FQI11P06TU , FQI12N50TU , FQI12N60CTU , FQI12N60TU , FQI13N06LTU , FQI13N06TU .