FQI10N60CTU Specs and Replacement

Type Designator: FQI10N60CTU

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 156 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 69 nS

Cossⓘ - Output Capacitance: 166 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.73 Ohm

Package: I2-PAK

FQI10N60CTU substitution

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FQI10N60CTU datasheet

 ..1. Size:614K  fairchild semi
 fqb10n60ctm fqi10n60ctu.pdf pdf_icon

FQI10N60CTU

TM QFET FQB10N60C / FQI10N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9.5A, 600V, RDS(on) = 0.73 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 44 nC) planar stripe, DMOS technology. Low Crss ( typical 18 pF) This advanced technology has been especially tailore... See More ⇒

 8.1. Size:608K  fairchild semi
 fqi10n20ctu.pdf pdf_icon

FQI10N60CTU

TM QFET FQB10N20C/FQI10N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9.5A, 200V, RDS(on) = 0.36 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 20 nC) planar stripe, DMOS technology. Low Crss ( typical 40.5 pF) This advanced technology has been especially tailore... See More ⇒

Detailed specifications: FQD9N25TM, FQE10N20CTU, FQH140N10, FQH18N50V2, FQH44N10F133, FQH70N10, FQH90N15, FQI10N20CTU, IRF840, FQI11N40TU, FQI11P06TU, FQI12N50TU, FQI12N60CTU, FQI12N60TU, FQI13N06LTU, FQI13N06TU, FQI13N50CTU

Keywords - FQI10N60CTU MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.