FQI12N60CTU MOSFET. Datasheet pdf. Equivalent
Type Designator: FQI12N60CTU
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 225 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 48 nC
trⓘ - Rise Time: 85 nS
Cossⓘ - Output Capacitance: 182 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.53 Ohm
Package: I2-PAK
FQI12N60CTU Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQI12N60CTU Datasheet (PDF)
fqb12n60ctm fqi12n60ctu.pdf
September 2007 QFETFQB12N60C / FQI12N60C600V N-Channel MOSFETFeatures Description 12A, 600V, RDS(on) = 0.65 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 48 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 21pF)This advanced technology has been especially
fqb12n60tm am002 fqi12n60tu.pdf
April 2000TMQFETQFETQFETQFETFQB12N60 / FQI12N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 10.5A, 600V, RDS(on) = 0.7 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 42 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technolo
fqb12n50tm am002 fqi12n50tu.pdf
TMQFETFQB12N50 / FQI12N50500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 12.1A, 500V, RDS(on) = 0.49 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 39 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been especially tailored
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October 2008QFETFQB12P20 / FQI12P20200V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -11.5A, -200V, RDS(on) = 0.47 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been espe
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: IRFR9110
History: IRFR9110
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