FQI12N60CTU. Аналоги и основные параметры

Наименование производителя: FQI12N60CTU

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 225 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 12 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 85 ns

Cossⓘ - Выходная емкость: 182 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.53 Ohm

Тип корпуса: I2-PAK

Аналог (замена) для FQI12N60CTU

- подборⓘ MOSFET транзистора по параметрам

 

FQI12N60CTU даташит

 ..1. Size:821K  fairchild semi
 fqb12n60ctm fqi12n60ctu.pdf pdf_icon

FQI12N60CTU

September 2007 QFET FQB12N60C / FQI12N60C 600V N-Channel MOSFET Features Description 12A, 600V, RDS(on) = 0.65 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 48 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 21pF) This advanced technology has been especially

 6.1. Size:540K  fairchild semi
 fqb12n60tm am002 fqi12n60tu.pdf pdf_icon

FQI12N60CTU

April 2000 TM QFET QFET QFET QFET FQB12N60 / FQI12N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 10.5A, 600V, RDS(on) = 0.7 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 42 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technolo

 8.1. Size:616K  fairchild semi
 fqb12n50tm am002 fqi12n50tu.pdf pdf_icon

FQI12N60CTU

TM QFET FQB12N50 / FQI12N50 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 12.1A, 500V, RDS(on) = 0.49 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 39 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especially tailored

 9.1. Size:1014K  fairchild semi
 fqb12p20 fqi12p20.pdf pdf_icon

FQI12N60CTU

October 2008 QFET FQB12P20 / FQI12P20 200V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -11.5A, -200V, RDS(on) = 0.47 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been espe

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... FQH44N10F133, FQH70N10, FQH90N15, FQI10N20CTU, FQI10N60CTU, FQI11N40TU, FQI11P06TU, FQI12N50TU, 50N06, FQI12N60TU, FQI13N06LTU, FQI13N06TU, FQI13N50CTU, FQI15P12TU, FQI16N25CTU, FQI17N08LTU, FQI17N08TU