FQI1P50TU MOSFET. Datasheet pdf. Equivalent
Type Designator: FQI1P50TU
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 63 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 1.5 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 11 nC
Rise Time (tr): 25 nS
Drain-Source Capacitance (Cd): 40 pF
Maximum Drain-Source On-State Resistance (Rds): 10.5 Ohm
Package: I2-PAK
FQI1P50TU Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQI1P50TU Datasheet (PDF)
1.1. fqi1p50tu.pdf 
Size:934K _fairchild_semi
October 2008 QFET® FQB1P50 / FQI1P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -1.5A, -500V, RDS(on) = 10.5Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 11 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.0 pF) This advanced technology is especially t
3.1. fqb1p50 fqi1p50.pdf Size:934K _fairchild_semi
October 2008 QFET FQB1P50 / FQI1P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -1.5A, -500V, RDS(on) = 10.5? @VGS = -10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 11 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology is especially tailored to min
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
