All MOSFET. FQI1P50TU Datasheet

 

FQI1P50TU MOSFET. Datasheet pdf. Equivalent

Type Designator: FQI1P50TU

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 63 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 1.5 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 11 nC

Rise Time (tr): 25 nS

Drain-Source Capacitance (Cd): 40 pF

Maximum Drain-Source On-State Resistance (Rds): 10.5 Ohm

Package: I2-PAK

FQI1P50TU Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQI1P50TU Datasheet (PDF)

1.1. fqi1p50tu.pdf Size:934K _fairchild_semi

FQI1P50TU
FQI1P50TU

October 2008 QFET® FQB1P50 / FQI1P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -1.5A, -500V, RDS(on) = 10.5Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 11 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.0 pF) This advanced technology is especially t

3.1. fqb1p50 fqi1p50.pdf Size:934K _fairchild_semi

FQI1P50TU
FQI1P50TU

October 2008 QFET FQB1P50 / FQI1P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -1.5A, -500V, RDS(on) = 10.5? @VGS = -10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 11 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology is especially tailored to min

 

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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