All MOSFET. FQI1P50TU Datasheet

 

FQI1P50TU Datasheet and Replacement


   Type Designator: FQI1P50TU
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 63 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 10.5 Ohm
   Package: I2-PAK
 

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FQI1P50TU Datasheet (PDF)

 ..1. Size:934K  fairchild semi
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FQI1P50TU

October 2008QFETFQB1P50 / FQI1P50500V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -1.5A, -500V, RDS(on) = 10.5 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 11 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology is especially t

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History: KX3N80 | IRFS450B | FDS3612 | CJAC10TH10

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