All MOSFET. FQI1P50TU Datasheet

 

FQI1P50TU Datasheet and Replacement


   Type Designator: FQI1P50TU
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 63 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 1.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 10.5 Ohm
   Package: I2-PAK
      - MOSFET Cross-Reference Search

 

FQI1P50TU Datasheet (PDF)

 ..1. Size:934K  fairchild semi
 fqb1p50tm fqb1p50 fqi1p50 fqi1p50tu.pdf pdf_icon

FQI1P50TU

October 2008QFETFQB1P50 / FQI1P50500V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -1.5A, -500V, RDS(on) = 10.5 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 11 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology is especially t

Datasheet: FQI13N50CTU , FQI15P12TU , FQI16N25CTU , FQI17N08LTU , FQI17N08TU , FQI17P06TU , FQI19N20CTU , FQI19N20TU , IRFB4227 , FQI27N25TU , FQI27P06TU , FQI2N30TU , FQI2N90TU , FQI2NA90TU , FQI2P25TU , FQI34P10TU , FQI3N25TU .

History: 2SK4194LS | 2SK3780-01 | QM3004M3 | SWD062R08E8T | NCE70T180F | APM3023NF | SI7392ADP

Keywords - FQI1P50TU MOSFET datasheet

 FQI1P50TU cross reference
 FQI1P50TU equivalent finder
 FQI1P50TU lookup
 FQI1P50TU substitution
 FQI1P50TU replacement

 

 
Back to Top

 


 
.