FQI4P40TU Specs and Replacement

Type Designator: FQI4P40TU

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 85 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.1 Ohm

Package: I2-PAK

FQI4P40TU substitution

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FQI4P40TU datasheet

 ..1. Size:642K  fairchild semi
 fqb4p40tm fqb4p40 fqi4p40 fqi4p40tu.pdf pdf_icon

FQI4P40TU

August 2000 TM QFET QFET QFET QFET FQB4P40 / FQI4P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -3.5A, -400V, RDS(on) = 3.1 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 18 nC) planar stripe, DMOS technology. Low Crss ( typical 11 pF) This advanced technolog... See More ⇒

Detailed specifications: FQI3N40TU, FQI3N90TU, FQI3P20TU, FQI3P50TU, FQI47P06TU, FQI4N20TU, FQI4N25TU, FQI4N90TU, K3569, FQI50N06LTU, FQI50N06TU, FQI5N15TU, FQI5N20LTU, FQI5N20TU, FQI5N30TU, FQI5N40TU, FQI5N50CTU

Keywords - FQI4P40TU MOSFET specs

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