All MOSFET. FQI4P40TU Datasheet

 

FQI4P40TU Datasheet and Replacement


   Type Designator: FQI4P40TU
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 85 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.1 Ohm
   Package: I2-PAK
 

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FQI4P40TU Datasheet (PDF)

 ..1. Size:642K  fairchild semi
 fqb4p40tm fqb4p40 fqi4p40 fqi4p40tu.pdf pdf_icon

FQI4P40TU

August 2000TMQFETQFETQFETQFETFQB4P40 / FQI4P40400V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -3.5A, -400V, RDS(on) = 3.1 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 18 nC)planar stripe, DMOS technology. Low Crss ( typical 11 pF)This advanced technolog

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History: AUIRF1324WL

Keywords - FQI4P40TU MOSFET datasheet

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