All MOSFET. FQI5P10TU Datasheet

 

FQI5P10TU MOSFET. Datasheet pdf. Equivalent

Type Designator: FQI5P10TU

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 40 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 4.5 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 6.3 nC

Rise Time (tr): 70 nS

Drain-Source Capacitance (Cd): 70 pF

Maximum Drain-Source On-State Resistance (Rds): 1.05 Ohm

Package: I2-PAK

FQI5P10TU Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQI5P10TU Datasheet (PDF)

1.1. fqi5p10tu.pdf Size:653K _fairchild_semi

FQI5P10TU
FQI5P10TU

TM QFET FQB5P10 / FQI5P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -4.5A, -100V, RDS(on) = 1.05Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.3 nC) planar stripe, DMOS technology. • Low Crss ( typical 18 pF) This advanced technology has been especially tailore

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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