FQI5P10TU MOSFET PDF: P-Ch, 100V, 4.5A. Full specification with pinout and replacement list

FQI5P10TU PDF Specs and Replacement

   Type Designator: FQI5P10TU
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.05 Ohm
   Package: I2-PAK

FQI5P10TU substitution

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FQI5P10TU PDF Specs

..1. Size:653K fairchild semi
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TM QFET FQB5P10 / FQI5P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -4.5A, -100V, RDS(on) = 1.05 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.3 nC) planar stripe, DMOS technology. Low Crss ( typical 18 pF) This advanced technology has been especially tailore... See More ⇒

Detailed specifications: FQI5N15TU , FQI5N20LTU , FQI5N20TU , FQI5N30TU , FQI5N40TU , FQI5N50CTU , FQI5N60CTU , FQI5N80TU , IRFB3607 , FQI6N15TU , FQI6N40CTU , FQI6N50TU , FQI6N60CTU , FQI7N10LTU , FQI7N10TU , FQI7N60TU , FQI7N80TU .