All MOSFET. FQI5P10TU Datasheet

 

FQI5P10TU Datasheet and Replacement


   Type Designator: FQI5P10TU
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.05 Ohm
   Package: I2-PAK
 

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FQI5P10TU Datasheet (PDF)

 ..1. Size:653K  fairchild semi
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FQI5P10TU

TMQFETFQB5P10 / FQI5P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -4.5A, -100V, RDS(on) = 1.05 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.3 nC)planar stripe, DMOS technology. Low Crss ( typical 18 pF)This advanced technology has been especially tailore

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History: AOI4T60 | SI2301-TP | PHU11NQ10T | RJK6013DPE | HAT2085R | IXTH440N055T2 | 60N06L-TF3-T

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