All MOSFET. FQI7N80TU Datasheet

 

FQI7N80TU MOSFET. Datasheet pdf. Equivalent


   Type Designator: FQI7N80TU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 167 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 6.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 40 nC
   trⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: I2-PAK

 FQI7N80TU Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQI7N80TU Datasheet (PDF)

 ..1. Size:836K  fairchild semi
 fqb7n80tm am002 fqi7n80tu fqi7n80 fqb7n80.pdf

FQI7N80TU FQI7N80TU

October 2008QFETFQB7N80 / FQI7N80800V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 6.6A, 800V, RDS(on) = 1.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 40 nC)planar stripe, DMOS technology. Low Crss ( typical 19 pF)This advanced technology has been especially

 7.1. Size:1095K  onsemi
 fqi7n80.pdf

FQI7N80TU FQI7N80TU

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:546K  fairchild semi
 fqi7n10tu.pdf

FQI7N80TU FQI7N80TU

December 2000TMQFETQFETQFETQFETFQB7N10 / FQI7N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.3A, 100V, RDS(on) = 0.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.8 nC)planar stripe, DMOS technology. Low Crss ( typical 10 pF)This advanced technolo

 9.2. Size:651K  fairchild semi
 fqb7n60tm fqb7n60 fqi7n60 fqi7n60tu.pdf

FQI7N80TU FQI7N80TU

October 2008QFETFQB7N60 / FQI7N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.4A, 600V, RDS(on) = 1.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 29 nC)planar stripe, DMOS technology. Low Crss ( typical 16 pF)This advanced technology has been especially

 9.3. Size:554K  fairchild semi
 fqb7n10ltm fqi7n10ltu.pdf

FQI7N80TU FQI7N80TU

December 2000TMQFETQFETQFETQFETFQB7N10L / FQI7N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.3A, 100V, RDS(on) = 0.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.6 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced

 9.4. Size:770K  onsemi
 fqb7n60 fqi7n60.pdf

FQI7N80TU FQI7N80TU

FQB7N60 / FQI7N60N-Channel QFET MOSFET600 V, 7.4 A, 1.0 Features 7.4 A, 600 V, RDS(on) = 1.0 (Max.) @VGS = 10 V,Description ID = 3.7 AThis N-Channel enhancement mode power MOSFET is Low Gate Charge (Typ. 29 nC)produced using ON Semiconductors proprietary Low Crss (Typ. 16 pF)planar stripe and DMOS technology. This advanced MOSFET technology has been

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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