FQI7N80TU. Аналоги и основные параметры

Наименование производителя: FQI7N80TU

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 167 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 800 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 6.6 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 80 ns

Cossⓘ - Выходная емкость: 150 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.5 Ohm

Тип корпуса: I2-PAK

Аналог (замена) для FQI7N80TU

- подборⓘ MOSFET транзистора по параметрам

 

FQI7N80TU даташит

 ..1. Size:836K  fairchild semi
 fqb7n80tm am002 fqi7n80tu fqi7n80 fqb7n80.pdf pdf_icon

FQI7N80TU

October 2008 QFET FQB7N80 / FQI7N80 800V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 6.6A, 800V, RDS(on) = 1.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 40 nC) planar stripe, DMOS technology. Low Crss ( typical 19 pF) This advanced technology has been especially

 7.1. Size:1095K  onsemi
 fqi7n80.pdf pdf_icon

FQI7N80TU

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:546K  fairchild semi
 fqi7n10tu.pdf pdf_icon

FQI7N80TU

December 2000 TM QFET QFET QFET QFET FQB7N10 / FQI7N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.3A, 100V, RDS(on) = 0.35 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.8 nC) planar stripe, DMOS technology. Low Crss ( typical 10 pF) This advanced technolo

 9.2. Size:651K  fairchild semi
 fqb7n60tm fqb7n60 fqi7n60 fqi7n60tu.pdf pdf_icon

FQI7N80TU

October 2008 QFET FQB7N60 / FQI7N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.4A, 600V, RDS(on) = 1.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 29 nC) planar stripe, DMOS technology. Low Crss ( typical 16 pF) This advanced technology has been especially

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... FQI5P10TU, FQI6N15TU, FQI6N40CTU, FQI6N50TU, FQI6N60CTU, FQI7N10LTU, FQI7N10TU, FQI7N60TU, TK10A60D, FQI8N60CTU, FQI8P10TU, FQI9N08LTU, FQI9N08TU, FQI9N15TU, FQI9N25CTU, FQI9N50CTU, FQI9N50TU