FQI8N60CTU Specs and Replacement

Type Designator: FQI8N60CTU

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 147 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60.5 nS

Cossⓘ - Output Capacitance: 105 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: I2-PAK

FQI8N60CTU substitution

- MOSFET ⓘ Cross-Reference Search

 

FQI8N60CTU datasheet

 ..1. Size:965K  fairchild semi
 fqb8n60c fqi8n60c fqi8n60ctu.pdf pdf_icon

FQI8N60CTU

October 2008 QFET FQB8N60C / FQI8N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.5A, 600V, RDS(on) = 1.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especiall... See More ⇒

 6.1. Size:754K  onsemi
 fqb8n60c fqi8n60c.pdf pdf_icon

FQI8N60CTU

FQB8N60C / FQI8N60C N-Channel QFET MOSFET 600 V, 7.5 A, 1.2 Features 7.5 A, 600 V, RDS(on) = 1.2 (Max.) @ VGS = 10 V, ID = 3.75 A Description Low Gate Charge (Typ. 28 nC) This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor s proprietary planar Low Crss (Typ. 12 pF) stripe and DMOS technology. This advanced MOSFET technology has... See More ⇒

Detailed specifications: FQI6N15TU, FQI6N40CTU, FQI6N50TU, FQI6N60CTU, FQI7N10LTU, FQI7N10TU, FQI7N60TU, FQI7N80TU, AO4407, FQI8P10TU, FQI9N08LTU, FQI9N08TU, FQI9N15TU, FQI9N25CTU, FQI9N50CTU, FQI9N50TU, FQL50N40

Keywords - FQI8N60CTU MOSFET specs

 FQI8N60CTU cross reference

 FQI8N60CTU equivalent finder

 FQI8N60CTU pdf lookup

 FQI8N60CTU substitution

 FQI8N60CTU replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs