FQI9N08LTU MOSFET. Datasheet pdf. Equivalent
Type Designator: FQI9N08LTU
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 9.3 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 4.7 nC
trⓘ - Rise Time: 180 nS
Cossⓘ - Output Capacitance: 70 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm
Package: I2-PAK
FQI9N08LTU Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQI9N08LTU Datasheet (PDF)
fqi9n08ltu.pdf
June 2000TMQFETQFETQFETQFETFQB9N08L / FQI9N08L80V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.3A, 80V, RDS(on) = 0.21 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.7 nC)planar stripe, DMOS technology. Low Crss ( typical 16 pF)This advanced techno
fqb9n08tm fqi9n08tu.pdf
December 2000TMQFETQFETQFETQFETFQB9N08 / FQI9N0880V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.3A, 80V, RDS(on) = 0.21 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.9 nC)planar stripe, DMOS technology. Low Crss ( typical 13 pF)This advanced technology
fqb9n25ctm fqi9n25ctu.pdf
QFETFQB9N25C/FQI9N25C250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8.8A, 250V, RDS(on) = 0.43 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 26.5 nC)planar stripe, DMOS technology. Low Crss ( typical 45.5 pF)This advanced technology has been especially tailore
fqb9n50ctm fqb9n50c fqi9n50c fqi9n50ctu.pdf
TMQFETFQB9N50C/FQI9N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9 A, 500V, RDS(on) = 0.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 24 pF)This advanced technology has been especially tailored to
fqb9n50tm fqi9n50tu.pdf
April 2000TMQFETQFETQFETQFETFQB9N50 / FQI9N50500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 9.0A, 500V, RDS(on) = 0.73 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology
fqb9n15tm fqi9n15tu.pdf
May 2000TMQFETQFETQFETQFETFQB9N15 / FQI9N15150V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 9.0A, 150V, RDS(on) = 0.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 17 pF)This advanced technology has
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: APT60M75PVR | FDMA3028N
History: APT60M75PVR | FDMA3028N
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